Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard x-ray photoelectron spectroscopy

Ryota Takabe; Hiroki Takeuchi; Weijie Du; Keita Ito; Kaoru Toko; Shigenori Ueda; Akio Kimura; Takashi Suemasu

doi:10.1109/PVSC.2016.7750168

Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard x-ray photoelectron spectroscopy

Ryota Takabe, Hiroki Takeuchi, Weijie Du, Keita Ito, Kaoru Toko, Shigenori Ueda, Akio Kimura, Takashi Suemasu

IMR - Materials Development Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated native oxide/BaSi₂ and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi₂ is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi₂ capped with the a-Si layer.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2826-2829
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750168
Publication status	Published - 2016 Nov 18
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 2016 Jun 5 → 2016 Jun 10

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	16/6/5 → 16/6/10

Keywords

hard x-ray photoelectron spectroscopy
molecular beam epitaxy
silicide
surface passivation
thin-film solar cells

Access to Document

10.1109/PVSC.2016.7750168

Cite this

Takabe, R., Takeuchi, H., Du, W., Ito, K., Toko, K., Ueda, S., Kimura, A., & Suemasu, T. (2016). Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard x-ray photoelectron spectroscopy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2826-2829). Article 7750168 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750168

Takabe, Ryota ; Takeuchi, Hiroki ; Du, Weijie et al. / Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard x-ray photoelectron spectroscopy. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2826-2829 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{3736ec3eb73f43f183b917df23f3692e,

title = "Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard x-ray photoelectron spectroscopy",

abstract = "We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.",

keywords = "hard x-ray photoelectron spectroscopy, molecular beam epitaxy, silicide, surface passivation, thin-film solar cells",

author = "Ryota Takabe and Hiroki Takeuchi and Weijie Du and Keita Ito and Kaoru Toko and Shigenori Ueda and Akio Kimura and Takashi Suemasu",

note = "Funding Information: HAXPES measurements were performed at Synchrotron X-ray station of BL15XU, at SPring-8, and were supported by NIMS microstructural characterization platform as a program of Nanotechnology platform (Proposal Nos, 2014A4902, 2015A4907, and 2015B4906) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. S.U. and A.K. are grateful to HiSOR, Hiroshima University and JAEA at SPring-8 for the development of HAXPES at BL15XU. This work was financially supported by the Japan Science and Technology Agency (JST/CREST) and by a Grant-in-Aid for Scientific Research (A) (No. 15H02237) from the JSPS. R.T. was financially supported by a Grant-inaid for JSPS Fellows (No. 15J02139) Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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doi = "10.1109/PVSC.2016.7750168",

language = "English",

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Takabe, R, Takeuchi, H, Du, W, Ito, K, Toko, K, Ueda, S, Kimura, A & Suemasu, T 2016, Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard x-ray photoelectron spectroscopy. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7750168, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 2826-2829, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 16/6/5. https://doi.org/10.1109/PVSC.2016.7750168

Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard x-ray photoelectron spectroscopy. / Takabe, Ryota; Takeuchi, Hiroki; Du, Weijie et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2826-2829 7750168 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard x-ray photoelectron spectroscopy

AU - Takabe, Ryota

AU - Takeuchi, Hiroki

AU - Du, Weijie

AU - Ito, Keita

AU - Toko, Kaoru

AU - Ueda, Shigenori

AU - Kimura, Akio

AU - Suemasu, Takashi

N1 - Funding Information: HAXPES measurements were performed at Synchrotron X-ray station of BL15XU, at SPring-8, and were supported by NIMS microstructural characterization platform as a program of Nanotechnology platform (Proposal Nos, 2014A4902, 2015A4907, and 2015B4906) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. S.U. and A.K. are grateful to HiSOR, Hiroshima University and JAEA at SPring-8 for the development of HAXPES at BL15XU. This work was financially supported by the Japan Science and Technology Agency (JST/CREST) and by a Grant-in-Aid for Scientific Research (A) (No. 15H02237) from the JSPS. R.T. was financially supported by a Grant-inaid for JSPS Fellows (No. 15J02139) Publisher Copyright: © 2016 IEEE.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.

AB - We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.

KW - hard x-ray photoelectron spectroscopy

KW - molecular beam epitaxy

KW - silicide

KW - surface passivation

KW - thin-film solar cells

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BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

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Takabe R, Takeuchi H, Du W, Ito K, Toko K, Ueda S et al. Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard x-ray photoelectron spectroscopy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2826-2829. 7750168. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7750168