Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

S. F. Chichibu; M. Sugiyama; T. Kuroda; A. Tackeuchi; T. Kitamura; H. Nakanishi; T. Sota; S. P. DenBaars; S. Nakamura; Y. Ishida; H. Okumura

doi:10.1063/1.1421082

Band gap bowing and exciton localization in strained cubic In_xGa_1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura

IMRAM - Division of Measurements

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Abstract

Spontaneous emission mechanisms in InGaN alloys were studied by determining the effective band gap energies using photoluminescence excitation spectroscopy and static and time-resolved photoluminescence (PL) measurements on fully strained cubic (c-) In_xGa_1-xN films on c-GaN templates, which were grown by rf molecular-beam epitaxy on smaller lattice-mismatched 3C-SiC (001) substrates prepared on Si (001). The c-In_xGa_1-xN alloys exhibited large band gap bowing. The PL decay dynamics showed that the emission is due to recombination of localized excitons, the same as in the case of hexagonal InGaN. The c-In_xGa_1-xN exhibited a larger Stokes-like shift and a larger localization depth, showing that the material's inhomogeneity is much enhanced compared to that of the hexagonal polytype.

Original language	English
Pages (from-to)	3600-3602
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	22
DOIs	https://doi.org/10.1063/1.1421082
Publication status	Published - 2001 Nov 26

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@article{3315fdf061d44190afb6bc7820b70142,

title = "Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy",

abstract = "Spontaneous emission mechanisms in InGaN alloys were studied by determining the effective band gap energies using photoluminescence excitation spectroscopy and static and time-resolved photoluminescence (PL) measurements on fully strained cubic (c-) InxGa1-xN films on c-GaN templates, which were grown by rf molecular-beam epitaxy on smaller lattice-mismatched 3C-SiC (001) substrates prepared on Si (001). The c-InxGa1-xN alloys exhibited large band gap bowing. The PL decay dynamics showed that the emission is due to recombination of localized excitons, the same as in the case of hexagonal InGaN. The c-InxGa1-xN exhibited a larger Stokes-like shift and a larger localization depth, showing that the material's inhomogeneity is much enhanced compared to that of the hexagonal polytype.",

author = "Chichibu, {S. F.} and M. Sugiyama and T. Kuroda and A. Tackeuchi and T. Kitamura and H. Nakanishi and T. Sota and DenBaars, {S. P.} and S. Nakamura and Y. Ishida and H. Okumura",

year = "2001",

month = nov,

day = "26",

doi = "10.1063/1.1421082",

language = "English",

volume = "79",

pages = "3600--3602",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

AU - Chichibu, S. F.

AU - Sugiyama, M.

AU - Kuroda, T.

AU - Tackeuchi, A.

AU - Kitamura, T.

AU - Nakanishi, H.

AU - Sota, T.

AU - DenBaars, S. P.

AU - Nakamura, S.

AU - Ishida, Y.

AU - Okumura, H.

PY - 2001/11/26

Y1 - 2001/11/26

N2 - Spontaneous emission mechanisms in InGaN alloys were studied by determining the effective band gap energies using photoluminescence excitation spectroscopy and static and time-resolved photoluminescence (PL) measurements on fully strained cubic (c-) InxGa1-xN films on c-GaN templates, which were grown by rf molecular-beam epitaxy on smaller lattice-mismatched 3C-SiC (001) substrates prepared on Si (001). The c-InxGa1-xN alloys exhibited large band gap bowing. The PL decay dynamics showed that the emission is due to recombination of localized excitons, the same as in the case of hexagonal InGaN. The c-InxGa1-xN exhibited a larger Stokes-like shift and a larger localization depth, showing that the material's inhomogeneity is much enhanced compared to that of the hexagonal polytype.

AB - Spontaneous emission mechanisms in InGaN alloys were studied by determining the effective band gap energies using photoluminescence excitation spectroscopy and static and time-resolved photoluminescence (PL) measurements on fully strained cubic (c-) InxGa1-xN films on c-GaN templates, which were grown by rf molecular-beam epitaxy on smaller lattice-mismatched 3C-SiC (001) substrates prepared on Si (001). The c-InxGa1-xN alloys exhibited large band gap bowing. The PL decay dynamics showed that the emission is due to recombination of localized excitons, the same as in the case of hexagonal InGaN. The c-InxGa1-xN exhibited a larger Stokes-like shift and a larger localization depth, showing that the material's inhomogeneity is much enhanced compared to that of the hexagonal polytype.

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DO - 10.1063/1.1421082

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VL - 79

SP - 3600

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Band gap bowing and exciton localization in strained cubic In_xGa_1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

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