Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes

Shingo Ono, Riadh El Ouenzerfi, Alex Quema, Hidetoshi Murakami, Nobuhiko Sarukura, Takeshi Nishimatsu, Noriaki Terakubo, Hiroshi Mizuseki, Yoshiyuki Kawazoe, Akira Yoshikawa, Tsuguo Fukuda

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


The design principle for fluoride-containing optical devices for applications in the deep ultraviolet range is discussed. Variations in band gap energy, band structure and lattice constant of LiBaxCa ySr(1-X-y)F3 and Li(1-x)K xBa(1-yMgyF3 have been studied. The band structure and transition type of these fluorides are predicted by ab initia band calculations based on the local density approximation. The lattice-matched double-hetero structure of direct-band-gap compounds LiBaxCa ySr(1-x-y)F3 on LiSrF3 and Li( 1-X)KxBa(1-y)MgyF3 on either LiBaFj or KMgFj is sufficiently feasible to fabricate.

Original languageEnglish
Pages (from-to)7285-7290
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number10
Publication statusPublished - 2005 Oct 11


  • Band structure
  • Lattice-matched double-heterostructure
  • Light-emitting diode
  • Perovskite fluorides
  • Ultraviolet laser diode


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