@article{9dbfefe489a646bbbd4b2a847eafc9ad,
title = "Band structure modulation by carrier doping in random-network carbon nanotube transistors",
abstract = "We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.",
author = "Shuichi Nakamura and Megumi Ohishi and Masashi Shiraishi and Taishi Takenobu and Yoshihiro Iwasa and Hiromichi Kataura",
note = "Funding Information: Three of the authors (S.N., M.O., and M.S) thank all the members in Professor Y. Suzuki{\textquoteright}s laboratory at Osaka University for valuable discussion. This work was carried out by virtue of financial aid of New Energy and Industrial Technology Development Organization (NEDO), a Grant-in-Aid (No. 17310060) from the Ministry of Education, Science, Sports and Culture of Japan, a Grant-in-Aid for the Nanotechnology Support Project from the Ministry of Education, Science, Sports, and Culture of Japan, and NNPF in Sanken.",
year = "2006",
doi = "10.1063/1.2219389",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "1",
}