Abstract
3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.
| Original language | English |
|---|---|
| Pages (from-to) | 1549-1551 |
| Number of pages | 3 |
| Journal | IEICE Transactions on Electronics |
| Volume | E95-C |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2012 Sept |
Keywords
- Gain saturation
- Intensity modulation
- Modulation bandwidth
- Non-linear gain
- Optical injection
- Semiconductor lasers