Ba3Ga2N4

Hisanori Yamane; Francis J. DiSalvo

doi:10.1107/S0108270195015915

Ba₃Ga₂N₄

Hisanori Yamane, Francis J. DiSalvo

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The crystal structure of tribarium digallium tetranitride is based on a distorted cubic close packing of N atoms with three-quarters of the octahedral holes occupied by Ba atoms and one-quarter of the tetrahedral holes occupied by Ga atoms. The GaN₄ tetrahedra share edges and form [GaN_4/2^3-] chains, which are isosteric to the edge-sharing SiS₂ tetrahedra in the SiS₂ structure.

Original language	English
Pages (from-to)	760-761
Number of pages	2
Journal	Acta Crystallographica Section C: Crystal Structure Communications
Volume	52
Issue number	4
DOIs	https://doi.org/10.1107/S0108270195015915
Publication status	Published - 1996 Apr 15

ASJC Scopus subject areas

Biochemistry, Genetics and Molecular Biology(all)

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abstract = "The crystal structure of tribarium digallium tetranitride is based on a distorted cubic close packing of N atoms with three-quarters of the octahedral holes occupied by Ba atoms and one-quarter of the tetrahedral holes occupied by Ga atoms. The GaN4 tetrahedra share edges and form [GaN4/23-] chains, which are isosteric to the edge-sharing SiS2 tetrahedra in the SiS2 structure.",

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AU - Yamane, Hisanori

AU - DiSalvo, Francis J.

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N2 - The crystal structure of tribarium digallium tetranitride is based on a distorted cubic close packing of N atoms with three-quarters of the octahedral holes occupied by Ba atoms and one-quarter of the tetrahedral holes occupied by Ga atoms. The GaN4 tetrahedra share edges and form [GaN4/23-] chains, which are isosteric to the edge-sharing SiS2 tetrahedra in the SiS2 structure.

AB - The crystal structure of tribarium digallium tetranitride is based on a distorted cubic close packing of N atoms with three-quarters of the octahedral holes occupied by Ba atoms and one-quarter of the tetrahedral holes occupied by Ga atoms. The GaN4 tetrahedra share edges and form [GaN4/23-] chains, which are isosteric to the edge-sharing SiS2 tetrahedra in the SiS2 structure.

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Ba₃Ga₂N₄

Abstract

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