BaTiO3 based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors

Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

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9 Citations (Scopus)


The epitaxial growth of 0.6[BaTiO3]-0.4[Bi(Mg2/3Nb1/3)O3] (BT-BMN) relaxor ferroelectric thin-films on (100) Nb doped SrTiO3 substrates has been achieved and the structure is investigated for high-temperature capacitor applications. The post growth annealing decreases the oxygen vacancy and other defects in BT-BMN films, resulting in the enhancement of dielectric constant. An insertion of intermediate SrRuO3 layers as an electrode instead of Pt, sandwiching the film, is found to be more effective in enhancing the dielectric constant. A very high dielectric constant exceeding 400 was achieved from high-temperature annealed film and the film showed an excellent dielectric constant stability of below 11% in the temperature range of 80-400 °C. This will enable smaller, high-temperature tolerant, monolithically integrated thin-film capacitors on power semiconductor devices.

Original languageEnglish
Article number04DH02
JournalJapanese journal of applied physics
Issue number4
Publication statusPublished - 2015 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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