BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films prepared by Nd3+: YAG (λ = 266 nm) laser ablation

Yoichiro Masuda, Shigetaka Fujita, Akira Baba, Hiroshi Masumoto, Toshio Hirai, Kunihiro Nagata

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.

Original languageEnglish
Pages (from-to)S1372-S1374
JournalJournal of the Korean Physical Society
Issue number4 SUPPL.
Publication statusPublished - 1998


Dive into the research topics of 'BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films prepared by Nd3+: YAG (λ = 266 nm) laser ablation'. Together they form a unique fingerprint.

Cite this