Beyond MRAM: Nonvolatile Logic-in-Memory VLSI

Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)


The combination of spintronic devices with semiconductor integrated circuits will enable the replacement of conventional dynamic random-access memory (DRAM) with spin-transfer torque magnetic random-access memory (STT-MRAM) and facilitate high-performance, low-power, large-scale-integrated (LSI) logic circuits. Logic-in-memory architectures can take advantage of complementary metal-oxide-semiconductor/magnetic tunnel junction hybrid technology. The principles and benefits expected from these innovative architectures are explained and illustrated by several types of circuits that have been successfully designed, built, and tested. The benefits of low-power, high-performance, nonvolatile, spintronics-based logic LSIs discussed in this chapter could trigger a revolutionary change in our information- and communication-based society.

Original languageEnglish
Title of host publicationIntroduction to Magnetic Random-Access Memory
PublisherWiley-IEEE Press
Number of pages31
ISBN (Electronic)9781119079415
ISBN (Print)9781119009740
Publication statusPublished - 2016 Nov 26


  • Complementary metal-oxide semiconductor
  • Content-addressable memory
  • Domain wall motion elements
  • Magnetic flip-flops
  • Magnetic random-access memory
  • Magnetic tunnel junction
  • Nonvolatile logic-in-memory architecture
  • Spintronic devices
  • Very large-scale integrated circuits

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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