Abstract
Bi-rich BiFeO3 films were fabricated by chemical solution deposition followed by a post-deposition annealing at 823 K in air. Not only the polycrystalline BiFeO3 phase but also the bismuth oxide phase's were formed at high excess Bi contents. This suggested that the Bi atoms were not significantly evaporated. The remanent polarization decreased as the excess Bi contents increased at 90 K, though the remanent polarization of 33 μC/cm2 was still obtained at the excess Bi contents of 30 at.%. The magnetization monotonically decreased as the excess Bi content increased. It could be considered that the optimal Bi content is the stoichiometric value of BiFeO 3 in the preparing way of the CSD followed by the annealing at 823 K.
Original language | English |
---|---|
Pages (from-to) | 234-241 |
Number of pages | 8 |
Journal | Integrated Ferroelectrics |
Volume | 95 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
Keywords
- Bi
- BiFeO film
- Magnetic property
- Remanent polarization
ASJC Scopus subject areas
- Control and Systems Engineering
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry