Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure

Rento Ohsugi; Yoji Kunihashi; Haruki Sanada; Makoto Kohda; Hideki Gotoh; Tetsuomi Sogawa; Junsaku Nitta

doi:10.7567/APEX.9.043002

Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure

Rento Ohsugi, Yoji Kunihashi, Haruki Sanada, Makoto Kohda, Hideki Gotoh, Tetsuomi Sogawa, Junsaku Nitta

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump-probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.

Original language	English
Article number	43002
Journal	Applied Physics Express
Volume	9
Issue number	4
DOIs	https://doi.org/10.7567/APEX.9.043002
Publication status	Published - 2016 Apr

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title = "Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure",

abstract = "We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump-probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.",

author = "Rento Ohsugi and Yoji Kunihashi and Haruki Sanada and Makoto Kohda and Hideki Gotoh and Tetsuomi Sogawa and Junsaku Nitta",

note = "Funding Information: This work was supported by Grants-in-Aid for Scientific Research (15H05699, 15H02099, and 25220604) from the Japan Society for the Promotion of Science and by the ImPACT Program of Council for Science, Technology, and Innovation. JN acknowledges partial support from the Strategic Japanese-German Joint Research Program. Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = apr,

doi = "10.7567/APEX.9.043002",

language = "English",

volume = "9",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

number = "4",

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TY - JOUR

T1 - Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure

AU - Ohsugi, Rento

AU - Kunihashi, Yoji

AU - Sanada, Haruki

AU - Kohda, Makoto

AU - Gotoh, Hideki

AU - Sogawa, Tetsuomi

AU - Nitta, Junsaku

N1 - Funding Information: This work was supported by Grants-in-Aid for Scientific Research (15H05699, 15H02099, and 25220604) from the Japan Society for the Promotion of Science and by the ImPACT Program of Council for Science, Technology, and Innovation. JN acknowledges partial support from the Strategic Japanese-German Joint Research Program. Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/4

Y1 - 2016/4

N2 - We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump-probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.

AB - We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump-probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.

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VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 43002

ER -

Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure

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