Bias dependence of STM profiles around the quantum point contact

K. Nagaoka; S. Yaginuma; T. Nagao; T. Nakayama

doi:10.1016/j.susc.2006.01.160

Bias dependence of STM profiles around the quantum point contact

K. Nagaoka, S. Yaginuma, T. Nagao, T. Nakayama

Research output: Contribution to journal › Article › peer-review

Abstract

We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

Original language	English
Pages (from-to)	4319-4322
Number of pages	4
Journal	Surface Science
Volume	600
Issue number	18
DOIs	https://doi.org/10.1016/j.susc.2006.01.160
Publication status	Published - 2006 Sept 15

Keywords

Bismuth (Bi)
Nanostructures
Quantum confinement
Reflection high-energy electron diffraction (RHEED)
Scanning tunneling microscopy (STM)
Silicon (Si)
Thin film structure

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2006.01.160

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title = "Bias dependence of STM profiles around the quantum point contact",

abstract = "We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.",

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year = "2006",

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T1 - Bias dependence of STM profiles around the quantum point contact

AU - Nagaoka, K.

AU - Yaginuma, S.

AU - Nagao, T.

AU - Nakayama, T.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

AB - We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

KW - Bismuth (Bi)

KW - Nanostructures

KW - Quantum confinement

KW - Reflection high-energy electron diffraction (RHEED)

KW - Scanning tunneling microscopy (STM)

KW - Silicon (Si)

KW - Thin film structure

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DO - 10.1016/j.susc.2006.01.160

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SP - 4319

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JO - Surface Science

JF - Surface Science

IS - 18

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Bias dependence of STM profiles around the quantum point contact

Abstract

Keywords

ASJC Scopus subject areas

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