Bias dependence of STM profiles around the quantum point contact

K. Nagaoka, S. Yaginuma, T. Nagao, T. Nakayama

    Research output: Contribution to journalArticlepeer-review


    We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

    Original languageEnglish
    Pages (from-to)4319-4322
    Number of pages4
    JournalSurface Science
    Issue number18
    Publication statusPublished - 2006 Sept 15


    • Bismuth (Bi)
    • Nanostructures
    • Quantum confinement
    • Reflection high-energy electron diffraction (RHEED)
    • Scanning tunneling microscopy (STM)
    • Silicon (Si)
    • Thin film structure

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry


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