TY - JOUR
T1 - Bias dependent potential distribution of a Pt/HfO2/SiO 2/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy
AU - Yamashita, Yoshiyuki
AU - Yoshikawa, Hideki
AU - Chikyo, Toyohiro
PY - 2014/5
Y1 - 2014/5
N2 - The electronic states and potential distribution throughout a Pt gate metal/high-k gate-stack structure were investigated using a bias application in hard X-ray photoelectron spectroscopy. Analyzing the core level shifts as functions of the applied bias voltage indicates that a potential gradient forms at the Pt/HfO2 interface.
AB - The electronic states and potential distribution throughout a Pt gate metal/high-k gate-stack structure were investigated using a bias application in hard X-ray photoelectron spectroscopy. Analyzing the core level shifts as functions of the applied bias voltage indicates that a potential gradient forms at the Pt/HfO2 interface.
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U2 - 10.7567/JJAP.53.05FH05
DO - 10.7567/JJAP.53.05FH05
M3 - Article
AN - SCOPUS:84903316548
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5 SPEC. ISSUE 1
M1 - 05FH05
ER -