Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

M. Kohda; T. Kita; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1063/1.2219141

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n⁺-GaAs Esaki diode

M. Kohda, T. Kita, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

We investigated injection of spin polarized electrons in a (Ga,Mn)As/n ⁺-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (P_EL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum P_EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

Original language	English
Article number	012103
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219141
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode",

abstract = "We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.",

author = "M. Kohda and T. Kita and Y. Ohno and F. Matsukura and H. Ohno",

note = "Funding Information: The authors would like to acknowledge T. Dietl, K. Ohtani, H. Sanada, and D. Chiba for valuable discussions. This work was partly supported by Grant-in-Aids from JSPS and MEXT. ",

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T1 - Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

AU - Kohda, M.

AU - Kita, T.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors would like to acknowledge T. Dietl, K. Ohtani, H. Sanada, and D. Chiba for valuable discussions. This work was partly supported by Grant-in-Aids from JSPS and MEXT.

PY - 2006

Y1 - 2006

N2 - We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

AB - We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

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Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n⁺-GaAs Esaki diode

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