Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode

Sung Jin Ahn; Takeharu Kato; Hitoshi Kubota; Yasuo Ando; Terunobu Miyazaki

Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode

Sung Jin Ahn, Takeharu Kato, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

ENG - Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	INTERMAG ASIA 2005
Subtitle of host publication	Digests of the IEEE International Magnetics Conference
Pages	997
Number of pages	1
Publication status	Published - 2005
Event	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference - Nagoya, Japan Duration: 2005 Apr 4 → 2005 Apr 8

Publication series

Name	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Conference

Conference	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
Country/Territory	Japan
City	Nagoya
Period	05/4/4 → 05/4/8

Cite this

@inproceedings{367b030e55bf4c08976dde983cbd8dff,

title = "Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode",

author = "Ahn, {Sung Jin} and Takeharu Kato and Hitoshi Kubota and Yasuo Ando and Terunobu Miyazaki",

year = "2005",

language = "English",

isbn = "0780390091",

series = "INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference",

pages = "997",

booktitle = "INTERMAG ASIA 2005",

note = "INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference ; Conference date: 04-04-2005 Through 08-04-2005",

}

Ahn, SJ, Kato, T, Kubota, H, Ando, Y & Miyazaki, T 2005, Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode. in INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference. INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, pp. 997, INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, Nagoya, Japan, 05/4/4.

Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode. / Ahn, Sung Jin; Kato, Takeharu; Kubota, Hitoshi et al.
INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference. 2005. p. 997 (INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode

AU - Ahn, Sung Jin

AU - Kato, Takeharu

AU - Kubota, Hitoshi

AU - Ando, Yasuo

AU - Miyazaki, Terunobu

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=28444434738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28444434738&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:28444434738

SN - 0780390091

T3 - INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

SP - 997

BT - INTERMAG ASIA 2005

T2 - INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Y2 - 4 April 2005 through 8 April 2005

ER -

Bias-voltage dependence of tunnel magnetoresistance depending on the crystal structure of bottom ferromagentic electrode

Publication series

Conference

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