Bias voltage dependence of tunnel magnetoresistance effect in CoFeB/MgO/Co2X(X=Fe, Mn)Si magnetic tunnel junctions

T. Daibou; M. Shinano; M. Hattori; Y. Sakuraba; M. Oogane; Y. Ando; T. Miyazaki

doi:10.1016/j.jmmm.2006.10.761

Bias voltage dependence of tunnel magnetoresistance effect in CoFeB/MgO/Co₂X(X=Fe, Mn)Si magnetic tunnel junctions

T. Daibou, M. Shinano, M. Hattori, Y. Sakuraba, M. Oogane, Y. Ando, T. Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) with structure of sub (thermal oxidized Si)/Ta(10 nm)/Py(2 nm)/IrMn(10 nm)/Co₇₅Fe₂₅(2 nm)/Ru(0.85 nm)/ Co₄₀Fe₄₀B₂₀(5 nm)/MgO(2.5 nm)/poly crystalline Co₂FeSi or Co₂MnSi Heusler alloys/Ta(7)/Ru(7) have been grown by magnetron sputtering method. Differential resistance (dV/dI) and bias voltage dependence of the TMR ratio have been investigated at 6 K. The shape of TMR-V curve for the MTJ with Co₂MnSi showed significant voltage dependence of the TMR ratio.

Original language	English
Pages (from-to)	1926-1928
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.761
Publication status	Published - 2007 Mar

Keywords

CoFeB
CoFeSi
CoMnSi
Heusler alloys
Magnetic tunnel junctions
MgO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.10.761

Cite this

@article{1d0a97eb5fa9426895ce5e357f10e32a,

title = "Bias voltage dependence of tunnel magnetoresistance effect in CoFeB/MgO/Co2X(X=Fe, Mn)Si magnetic tunnel junctions",

abstract = "Magnetic tunnel junctions (MTJs) with structure of sub (thermal oxidized Si)/Ta(10 nm)/Py(2 nm)/IrMn(10 nm)/Co75Fe25(2 nm)/Ru(0.85 nm)/ Co40Fe40B20(5 nm)/MgO(2.5 nm)/poly crystalline Co2FeSi or Co2MnSi Heusler alloys/Ta(7)/Ru(7) have been grown by magnetron sputtering method. Differential resistance (dV/dI) and bias voltage dependence of the TMR ratio have been investigated at 6 K. The shape of TMR-V curve for the MTJ with Co2MnSi showed significant voltage dependence of the TMR ratio.",

keywords = "CoFeB, CoFeSi, CoMnSi, Heusler alloys, Magnetic tunnel junctions, MgO",

author = "T. Daibou and M. Shinano and M. Hattori and Y. Sakuraba and M. Oogane and Y. Ando and T. Miyazaki",

note = "Funding Information: This study was supported by the IT-Program of the Research Revolution 2002 (RR2002) “Development of Universal Low-Power Spin Memory” and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.761",

language = "English",

volume = "310",

pages = "1926--1928",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SUPPL. PART 3",

}

TY - JOUR

T1 - Bias voltage dependence of tunnel magnetoresistance effect in CoFeB/MgO/Co2X(X=Fe, Mn)Si magnetic tunnel junctions

AU - Daibou, T.

AU - Shinano, M.

AU - Hattori, M.

AU - Sakuraba, Y.

AU - Oogane, M.

AU - Ando, Y.

AU - Miyazaki, T.

N1 - Funding Information: This study was supported by the IT-Program of the Research Revolution 2002 (RR2002) “Development of Universal Low-Power Spin Memory” and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2007/3

Y1 - 2007/3

N2 - Magnetic tunnel junctions (MTJs) with structure of sub (thermal oxidized Si)/Ta(10 nm)/Py(2 nm)/IrMn(10 nm)/Co75Fe25(2 nm)/Ru(0.85 nm)/ Co40Fe40B20(5 nm)/MgO(2.5 nm)/poly crystalline Co2FeSi or Co2MnSi Heusler alloys/Ta(7)/Ru(7) have been grown by magnetron sputtering method. Differential resistance (dV/dI) and bias voltage dependence of the TMR ratio have been investigated at 6 K. The shape of TMR-V curve for the MTJ with Co2MnSi showed significant voltage dependence of the TMR ratio.

AB - Magnetic tunnel junctions (MTJs) with structure of sub (thermal oxidized Si)/Ta(10 nm)/Py(2 nm)/IrMn(10 nm)/Co75Fe25(2 nm)/Ru(0.85 nm)/ Co40Fe40B20(5 nm)/MgO(2.5 nm)/poly crystalline Co2FeSi or Co2MnSi Heusler alloys/Ta(7)/Ru(7) have been grown by magnetron sputtering method. Differential resistance (dV/dI) and bias voltage dependence of the TMR ratio have been investigated at 6 K. The shape of TMR-V curve for the MTJ with Co2MnSi showed significant voltage dependence of the TMR ratio.

KW - CoFeB

KW - CoFeSi

KW - CoMnSi

KW - Heusler alloys

KW - Magnetic tunnel junctions

KW - MgO

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U2 - 10.1016/j.jmmm.2006.10.761

DO - 10.1016/j.jmmm.2006.10.761

M3 - Article

AN - SCOPUS:33847620657

SN - 0304-8853

VL - 310

SP - 1926

EP - 1928

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -