Bidirectional electric-induced conductance based on gete/sb2 te3 interfacial phase change memory for neuro-inspired computing

Shin Young Kang, Soo Min Jin, Ju Young Lee, Dae Seong Woo, Tae Hun Shim, In Ho Nam, Jea Gun Park, Yuji Sutou, Yun Heub Song

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2 Te3)16 iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2 Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2 Te3)16 iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge2 Sb2 Te5 PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb2 Te3)16 iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb2 Te3)16 iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory.

Original languageEnglish
Article number2692
JournalElectronics (Switzerland)
Issue number21
Publication statusPublished - 2021 Nov 1


  • Artificial synaptic device
  • Interfacial phase change memory
  • Neuromorphic devices
  • Phase change memory
  • Superlattice


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