ZnCdSe/ZnSe multi-quantum well (MQW) laser diodes without GaAs buffer layers have been fabricated using a single growth chamber MBE system. A five-second interruption in the MQW growth has been introduced to improve hetero-interface. To reduce series resistance, N-doping was adopted in ZnSe barrier layers of the MQW. On the other hand, Ga doping in this layer is shown to decrease the PL intensity of the MQW. Using these growth conditions, lasers in the wavelength of 492 nm have been successfully operated under pulse conditions at 90 K.
|Number of pages
|Published - 1992
|Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 26 → 1992 Aug 28
|Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
|92/8/26 → 92/8/28