Boron and nitrogen in GaAs and InP melts equilibrated with B 2O 3 flux

Tsuyoshi Yamada; Taku Kudo; Kazuki Tajima; Akira Otsuka; Takayuki Narushima; Chiaki Ouchi; Yasutaka Iguchi

doi:10.2320/matertrans.45.1306

Boron and nitrogen in GaAs and InP melts equilibrated with B ₂O ₃ flux

Tsuyoshi Yamada, Taku Kudo, Kazuki Tajima, Akira Otsuka, Takayuki Narushima, Chiaki Ouchi, Yasutaka Iguchi

ENG - Materials Processing

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The boron and nitrogen contents of GaAs and InP melts equilibrated with B ₂O ₃ flux were examined at 1523 and 1373 K, respectively, using a chemical equilibrium technique. GaAs or InP was melted with B ₂O ₃ flux in a silica ampoule with and without a BN crucible. The boron content decreased with increasing nitrogen content in both of the melts equilibrated with B ₂O ₃ flux and BN. The solubility product of BN in the melts was expressed as a function of nitrogen content. The relationship between the boron and nitrogen contents of a GaAs melt coexisted with BN agreed well with that in the residue after LEG crystal growth of GaAs. The boron content of the GaAs melt coexisted with silica was much larger than that of the GaAs melt with BN. It was suggested that the reduction of B ₂O ₃ by silicon introduced into the melt from silica led the increase of boron content.

Original language	English
Pages (from-to)	1306-1310
Number of pages	5
Journal	Materials Transactions
Volume	45
Issue number	4
DOIs	https://doi.org/10.2320/matertrans.45.1306
Publication status	Published - 2004 Apr

Keywords

B O
Boron
GaAs
InP
Liquid-encapsulated czochralski method
Nitrogen

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title = "Boron and nitrogen in GaAs and InP melts equilibrated with B 2O 3 flux",

abstract = "The boron and nitrogen contents of GaAs and InP melts equilibrated with B 2O 3 flux were examined at 1523 and 1373 K, respectively, using a chemical equilibrium technique. GaAs or InP was melted with B 2O 3 flux in a silica ampoule with and without a BN crucible. The boron content decreased with increasing nitrogen content in both of the melts equilibrated with B 2O 3 flux and BN. The solubility product of BN in the melts was expressed as a function of nitrogen content. The relationship between the boron and nitrogen contents of a GaAs melt coexisted with BN agreed well with that in the residue after LEG crystal growth of GaAs. The boron content of the GaAs melt coexisted with silica was much larger than that of the GaAs melt with BN. It was suggested that the reduction of B 2O 3 by silicon introduced into the melt from silica led the increase of boron content.",

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author = "Tsuyoshi Yamada and Taku Kudo and Kazuki Tajima and Akira Otsuka and Takayuki Narushima and Chiaki Ouchi and Yasutaka Iguchi",

year = "2004",

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doi = "10.2320/matertrans.45.1306",

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volume = "45",

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T1 - Boron and nitrogen in GaAs and InP melts equilibrated with B 2O 3 flux

AU - Yamada, Tsuyoshi

AU - Kudo, Taku

AU - Tajima, Kazuki

AU - Otsuka, Akira

AU - Narushima, Takayuki

AU - Ouchi, Chiaki

AU - Iguchi, Yasutaka

PY - 2004/4

Y1 - 2004/4

N2 - The boron and nitrogen contents of GaAs and InP melts equilibrated with B 2O 3 flux were examined at 1523 and 1373 K, respectively, using a chemical equilibrium technique. GaAs or InP was melted with B 2O 3 flux in a silica ampoule with and without a BN crucible. The boron content decreased with increasing nitrogen content in both of the melts equilibrated with B 2O 3 flux and BN. The solubility product of BN in the melts was expressed as a function of nitrogen content. The relationship between the boron and nitrogen contents of a GaAs melt coexisted with BN agreed well with that in the residue after LEG crystal growth of GaAs. The boron content of the GaAs melt coexisted with silica was much larger than that of the GaAs melt with BN. It was suggested that the reduction of B 2O 3 by silicon introduced into the melt from silica led the increase of boron content.

AB - The boron and nitrogen contents of GaAs and InP melts equilibrated with B 2O 3 flux were examined at 1523 and 1373 K, respectively, using a chemical equilibrium technique. GaAs or InP was melted with B 2O 3 flux in a silica ampoule with and without a BN crucible. The boron content decreased with increasing nitrogen content in both of the melts equilibrated with B 2O 3 flux and BN. The solubility product of BN in the melts was expressed as a function of nitrogen content. The relationship between the boron and nitrogen contents of a GaAs melt coexisted with BN agreed well with that in the residue after LEG crystal growth of GaAs. The boron content of the GaAs melt coexisted with silica was much larger than that of the GaAs melt with BN. It was suggested that the reduction of B 2O 3 by silicon introduced into the melt from silica led the increase of boron content.

KW - B O

KW - Boron

KW - GaAs

KW - InP

KW - Liquid-encapsulated czochralski method

KW - Nitrogen

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EP - 1310

JO - Materials Transactions

JF - Materials Transactions

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ER -

Boron and nitrogen in GaAs and InP melts equilibrated with B ₂O ₃ flux

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Keywords

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