Broadband antireflection for III-V semiconductors by subwavelength surface grating structures

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Abstract

Recently, it is demonstrated that the subwavelength grating (SWG), which is the surface-relief grating with the period smaller than the wavelength of light, behaves as an antireflection surface. In particular, a tapered SWG suppresses reflection over a wide spectral bandwidth. The SWS is more stable than the multulayered thin film, since it is fabricated from a single material. In this study, we demonstrate broadband antirefraction properties of III-V materials (GaSb) by using SWG. The surface nano-structures with 200-350nm periods are fabricated by means of electron beam lithography and fast atom beam (FAB) etching. The reflectivity of the sample is strongly suppressed from the visible to near IR region. The experimental data is compared with numerical simulations using the rigorous coupled analysis (RCWA).

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages2710-2713
Number of pages4
Publication statusPublished - 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 2003 May 112003 May 18

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeC

Conference

ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period03/5/1103/5/18

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