Broader spectral width InGaAsP stacked active layer superluminescent diodes

Osamu Mikami; Hiroshi Yasaka; Yoshio Noguchi

doi:10.1063/1.102571

Broader spectral width InGaAsP stacked active layer superluminescent diodes

Osamu Mikami, Hiroshi Yasaka, Yoshio Noguchi

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.

Original language	English
Pages (from-to)	987-989
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	11
DOIs	https://doi.org/10.1063/1.102571
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.102571

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title = "Broader spectral width InGaAsP stacked active layer superluminescent diodes",

abstract = "Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.",

author = "Osamu Mikami and Hiroshi Yasaka and Yoshio Noguchi",

year = "1990",

doi = "10.1063/1.102571",

language = "English",

volume = "56",

pages = "987--989",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Broader spectral width InGaAsP stacked active layer superluminescent diodes

AU - Mikami, Osamu

AU - Yasaka, Hiroshi

AU - Noguchi, Yoshio

PY - 1990

Y1 - 1990

N2 - Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.

AB - Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.

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U2 - 10.1063/1.102571

DO - 10.1063/1.102571

M3 - Article

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EP - 989

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Broader spectral width InGaAsP stacked active layer superluminescent diodes

Abstract

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