TY - JOUR
T1 - Bulk Heterojunction Quasi-Two-Dimensional Perovskite Solar Cell with 1.18 v High Photovoltage
AU - Wang, Han
AU - Cheng, Guanghui
AU - Xie, Jiangsheng
AU - Zhao, Shenghe
AU - Qin, Minchao
AU - Chan, Christopher C.S.
AU - Qiu, Yongcai
AU - Chen, Guangxu
AU - Duan, Chunhui
AU - Wong, Kam Sing
AU - Wang, Jiannong
AU - Lu, Xinhui
AU - Xu, Jianbin
AU - Yan, Keyou
N1 - Funding Information:
The work is in part supported by Research Grants Council of Hong Kong, particularly, via Grant nos. AoE/P-03/08, N_CUHK405/12, T23-407/13-N, AoE/P-02/12, 14207515, 14204616, and CUHK Group Research Scheme. Acknowledgment to National Engineering Laboratory for VOCs Pollution Control Technology and Equipment, Natural Science Foundation of China (21776315), Shenzhen Peacock Plan (KQTD2016053015544057), Nanshan Pilot Plan (LHTD20170001), PetroChina Innovation Foundation (2017D5007-0402), Natural Science Foundation of Shandong Province (ZR2016BL12), and Qingdao independent innovation program (16-5-1-88-jch) for kind support.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2019/1/23
Y1 - 2019/1/23
N2 - Multicomponent quasi-two-dimensional perovskites (Q-2DPs) have efficient luminescence and improved stability, which are highly desirable for light-emitting diode and perovskite solar cell (PSC). However, the lack of radiative recombination at room temperature is still not well understood and the performance of PSC is not good enough as well. The open-circuit voltage (V OC ) is even lower than that of three-dimensional (3D) PSC with a narrower band gap. In this work, we study the energy transfer of excitons between their multiple components by time-resolved photoluminescence and find that charge transfer from high-energy states to low-energy state is gradually suppressed during elevating temperature owing to trap-mediated recombination. This may reveal the bottleneck of luminescence at room temperature in Q-2DPs, leading to large photovoltage loss in 2D PSC. Therefore, we develop a p-i-n bulk heterojunction (BHJ) structure to reduce the nonradiative recombination and obtain high V OC of 1.18 V for (PMA) 2 MA 4 Pb 5 I 15 Cl (33.3% PMA) BHJ device, much higher than that of the planar counterparts. The enhanced efficiency is attributed to the improved exciton dissociation via BHJ interface. Our results provide an important step toward high V OC and stable 2D PSCs, which could be used for tandem solar cell and colorful photovoltaic windows.
AB - Multicomponent quasi-two-dimensional perovskites (Q-2DPs) have efficient luminescence and improved stability, which are highly desirable for light-emitting diode and perovskite solar cell (PSC). However, the lack of radiative recombination at room temperature is still not well understood and the performance of PSC is not good enough as well. The open-circuit voltage (V OC ) is even lower than that of three-dimensional (3D) PSC with a narrower band gap. In this work, we study the energy transfer of excitons between their multiple components by time-resolved photoluminescence and find that charge transfer from high-energy states to low-energy state is gradually suppressed during elevating temperature owing to trap-mediated recombination. This may reveal the bottleneck of luminescence at room temperature in Q-2DPs, leading to large photovoltage loss in 2D PSC. Therefore, we develop a p-i-n bulk heterojunction (BHJ) structure to reduce the nonradiative recombination and obtain high V OC of 1.18 V for (PMA) 2 MA 4 Pb 5 I 15 Cl (33.3% PMA) BHJ device, much higher than that of the planar counterparts. The enhanced efficiency is attributed to the improved exciton dissociation via BHJ interface. Our results provide an important step toward high V OC and stable 2D PSCs, which could be used for tandem solar cell and colorful photovoltaic windows.
KW - bulk heterojunction
KW - energy-transfer bottleneck
KW - large photovoltage
KW - trap-mediated recombination
KW - two-dimensional perovskite
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U2 - 10.1021/acsami.8b17030
DO - 10.1021/acsami.8b17030
M3 - Article
C2 - 30585488
AN - SCOPUS:85060026811
SN - 1944-8244
VL - 11
SP - 2935
EP - 2943
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 3
ER -