C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

Yuji Yamamoto, Naofumi Ueno, Masao Sakuraba, Junichi Murota, Andreas Mai, Bernd Tillack

Research output: Contribution to journalArticlepeer-review

Abstract

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH3SiH3 is exposed at 250°C to 500°C to a Ge on Si (100) substrate using H2 or N2 carrier gas followed by a Ge cap layer deposition. At 350°C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350°C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH3SiH3 is adsorbed on the Ge surface without decomposing the C-Si bond. On the other hand, by using H2 as carrier gas, lower incorporated C is observed in comparison to Si. CH3SiH3 injected with H2 carrier gas is adsorbed on Ge without decomposing the C-Si bond and the adsorbed C is reduced by dissociation of the C-Si bond during temperature ramp up to 550°C. The adsorbed C is maintained on the Ge surface in N2 at 550°C.

Original languageEnglish
Pages (from-to)24-28
Number of pages5
JournalThin Solid Films
Volume602
DOIs
Publication statusPublished - 2016 Mar 1

Keywords

  • Atomic layer doping
  • Chemical vapor deposition
  • Delta layer
  • Germanium
  • Methylsilane

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