TY - JOUR
T1 - C 60 field effect transistor with electrodes modified by La@C 82
AU - Hiroshiba, Nobuya
AU - Tanigaki, Katsumi
AU - Kumashiro, Ryotaro
AU - Ohashi, Hirotaka
AU - Wakahara, Takatsugu
AU - Akasaka, Takeshi
N1 - Funding Information:
The synchrotron radiation experiments were performed with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) as Nanotechnology Support Project. This work was supported by Creation of Nano Devices and Systems Based on New Physical Phenomena and Functional Principles of CREST of JST. The present work is also partially supported by the 21 century COE program ‘Particle-Matter Hierarchy’ of MEXT, Japan. This work was performed by a Grant-in-Aid from the Ministry of Education, Science, and Culture of Japan, No. 13304031.
PY - 2004/12/11
Y1 - 2004/12/11
N2 - C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.
AB - C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.
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U2 - 10.1016/j.cplett.2004.10.070
DO - 10.1016/j.cplett.2004.10.070
M3 - Article
AN - SCOPUS:9644252869
SN - 0009-2614
VL - 400
SP - 235
EP - 238
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -