Calibration and control of in-plane Mg doping distribution in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy

Masaki Uchida; Joseph Falson; Yusaburo Segawa; Yusuke Kozuka; Atsushi Tsukazaki; Masashi Kawasaki

doi:10.7567/JJAP.54.028004

Calibration and control of in-plane Mg doping distribution in Mg_xZn_1-xO/ZnO heterostructures grown by molecular beam epitaxy

Masaki Uchida, Joseph Falson, Yusaburo Segawa, Yusuke Kozuka, Atsushi Tsukazaki, Masashi Kawasaki

IMR - Materials Property Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The in-plane Mg doping distribution in molecular beam epitaxy grown Mg_xZn_1-xO/ZnO heterostructures is mapped by low-temperature photoluminescence measurements in an effort to evaluate and control the resultant inhomogeneity formed during the growth process. In an unrotated sample, the independent configuration effects of the O₃ and Mg source cells are clearly demonstrated in a composition spread due to flux gradients, while this inhomogeneity is suppressed by sample rotation during the growth. The present mapping results provide an important means for investigating improved doping regimes with the aim of enhancing the quality of quantum transport observable at the Mg_xZn_1-xO/ZnO heterointerface.

Original language	English
Article number	028004
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.54.028004
Publication status	Published - 2015 Feb 1

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title = "Calibration and control of in-plane Mg doping distribution in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy",

abstract = "The in-plane Mg doping distribution in molecular beam epitaxy grown MgxZn1-xO/ZnO heterostructures is mapped by low-temperature photoluminescence measurements in an effort to evaluate and control the resultant inhomogeneity formed during the growth process. In an unrotated sample, the independent configuration effects of the O3 and Mg source cells are clearly demonstrated in a composition spread due to flux gradients, while this inhomogeneity is suppressed by sample rotation during the growth. The present mapping results provide an important means for investigating improved doping regimes with the aim of enhancing the quality of quantum transport observable at the MgxZn1-xO/ZnO heterointerface.",

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T1 - Calibration and control of in-plane Mg doping distribution in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy

AU - Uchida, Masaki

AU - Falson, Joseph

AU - Segawa, Yusaburo

AU - Kozuka, Yusuke

AU - Tsukazaki, Atsushi

AU - Kawasaki, Masashi

PY - 2015/2/1

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N2 - The in-plane Mg doping distribution in molecular beam epitaxy grown MgxZn1-xO/ZnO heterostructures is mapped by low-temperature photoluminescence measurements in an effort to evaluate and control the resultant inhomogeneity formed during the growth process. In an unrotated sample, the independent configuration effects of the O3 and Mg source cells are clearly demonstrated in a composition spread due to flux gradients, while this inhomogeneity is suppressed by sample rotation during the growth. The present mapping results provide an important means for investigating improved doping regimes with the aim of enhancing the quality of quantum transport observable at the MgxZn1-xO/ZnO heterointerface.

AB - The in-plane Mg doping distribution in molecular beam epitaxy grown MgxZn1-xO/ZnO heterostructures is mapped by low-temperature photoluminescence measurements in an effort to evaluate and control the resultant inhomogeneity formed during the growth process. In an unrotated sample, the independent configuration effects of the O3 and Mg source cells are clearly demonstrated in a composition spread due to flux gradients, while this inhomogeneity is suppressed by sample rotation during the growth. The present mapping results provide an important means for investigating improved doping regimes with the aim of enhancing the quality of quantum transport observable at the MgxZn1-xO/ZnO heterointerface.

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Calibration and control of in-plane Mg doping distribution in Mg_xZn_1-xO/ZnO heterostructures grown by molecular beam epitaxy

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