TY - JOUR
T1 - Capacitance-voltage characterization of La2O3 metal-oxide-semiconductor structures on In0.53Ga0.47As substrate with different surface treatment methods
AU - Zade, Dariush
AU - Kanda, Takashi
AU - Yamashita, Koji
AU - Kakushima, Kuniyuki
AU - Nohira, Hiroshi
AU - Ahmet, Parhat
AU - Tsutsui, Kazuo
AU - Nishiyama, Akira
AU - Sugii, Nobuyuki
AU - Natori, Kenji
AU - Hattori, Takeo
AU - Iwai, Hiroshi
PY - 2011/10
Y1 - 2011/10
N2 - We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance-voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3μF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.
AB - We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance-voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3μF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.
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U2 - 10.1143/JJAP.50.10PD03
DO - 10.1143/JJAP.50.10PD03
M3 - Article
AN - SCOPUS:80054880637
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 10 PART 2
ER -