Carbonaceous field effect transistor with graphene and diamondlike carbon

Susumu Takabayashi, Shuichi Ogawa, Yuji Takakuwa, Hyun Chul Kang, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


A carbonaceous field effect transistor, designated as a 'DLC-GFET', consisting of a graphene channel and a diamondlike carbon (DLC) top-gate dielectric film was fabricated. A DLC film was formed 'directly' onto the graphene channel using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD) without forming complex passivation interlayers. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). The Raman analysis suggests that the electrical characteristics are due to unintentional hole doping from the DLC film into the graphene channel. The maximum transconductances per unit device width in the n-channel and the p-channel modes (g mn,max and g mp,max) are 14.6 mS/mm and 8.8 mS/mm, respectively, with a gate thickness of 48 nm and a gate length of 5 μm. Formation of the DLC top-gate does not cause obvious damage to the graphene channel. Hence, the PA-CVD method is suitable to form gate dielectrics onto graphene.

Original languageEnglish
Pages (from-to)118-123
Number of pages6
JournalDiamond and Related Materials
Publication statusPublished - 2012 Feb


  • Diamondlike carbon (DLC)
  • Field effect transistor (FET)
  • Graphene
  • Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD)


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