TY - JOUR
T1 - Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells
AU - Oh, Ji Won
AU - Yoshita, Masahiro
AU - Itoh, Hirotake
AU - Akiyama, Hidefumi
AU - Pfeiffer, Loren N.
AU - West, Ken W.
N1 - Funding Information:
The authors are grateful for the financial support from the Ministry of Education, Culture, Sports, Science and Technology, Japan.
PY - 2004/3
Y1 - 2004/3
N2 - By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.
AB - By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.
KW - Atomic steps
KW - Atomically flat (1 1 0) surface
KW - Micro PL
KW - Temperature-dependent carrier diffusion
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U2 - 10.1016/j.physe.2003.11.106
DO - 10.1016/j.physe.2003.11.106
M3 - Conference article
AN - SCOPUS:1642395297
SN - 1386-9477
VL - 21
SP - 689
EP - 692
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 2-4
T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)
Y2 - 14 July 2003 through 18 July 2003
ER -