Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells

Ji Won Oh, Masahiro Yoshita, Hirotake Itoh, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.

Original languageEnglish
Pages (from-to)689-692
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Publication statusPublished - 2004 Mar
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18


  • Atomic steps
  • Atomically flat (1 1 0) surface
  • Micro PL
  • Temperature-dependent carrier diffusion


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