Carrier doping into (Sr,Ba)2Cu3O4)(Cl,Br)2 with the Cu3O4

Masatsune Kato, Takaaki Tanaami, Yoji Koike

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1 Citation (Scopus)


A trial of the carrier doping into (Sr,Ba)2Cu3O4 (Cl,Ba)2 with the Cu3O4 plane, which is composed of Cu(1)O2 and extra Cu(2) sublattices, has been carried out through the partial substitution. We have succeeded in obtaining single-phase samples of Ba2C3-xLixO4Cl2 (0 ≤ x ≤ 1.0). With increasing x, the a-axis tends to decrease and the c-axis almost constant. All samples exhibit semiconductive behavior. The electrical resistivity decreases with increasing x up to 0.5 and tends to increase slightly for x > 0.5 due to disorder in the Cu3O4 plane through the substitution of Li+ for Cu2+. Both of the antiferromagnetic transition temperatures with respect to Cu(1) and Cu(2) decrease with increasing x. However, the antiferromagnetic ordering in the Cu(1)O2 sublattice still remains even for x = 0.5 Considering that the formal valence of Cu is + 2.2 for x = 0.5, holes doped through the Li-substitution may be localized in the Cu(2) site. We will also discuss the possibility of the appearance of the superconductivity in the present system with the Cu3O4 plane.

Original languageEnglish
Pages (from-to)1120-1123
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Issue number10
Publication statusPublished - 2000 Oct


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