TY - JOUR
T1 - Carrier generation mechanism and effect of tantalum-doping in transparent conductive amorphous SnO2 thin films
AU - Nakao, Shoichiro
AU - Hirose, Yasushi
AU - Fukumura, Tomoteru
AU - Hasegawa, Tetsuya
PY - 2014/5
Y1 - 2014/5
N2 - We investigated the transport properties of amorphous undoped and Ta-doped SnO2 thin films grown on unheated glass substrates by pulsed laser deposition. Optimized films exhibited a resistivity of 2×10%3 Ω cm, carrier density (ne) of (1-2)×1020 cm%3, and were highly transparent in the visible region. Ta-doping had little effect on ne in amorphous films, in contrast to in crystalline phases. These results suggest that carrier electrons in amorphous SnO2 films originated from oxygen vacancies, similar to in In 2O3-based amorphous films.
AB - We investigated the transport properties of amorphous undoped and Ta-doped SnO2 thin films grown on unheated glass substrates by pulsed laser deposition. Optimized films exhibited a resistivity of 2×10%3 Ω cm, carrier density (ne) of (1-2)×1020 cm%3, and were highly transparent in the visible region. Ta-doping had little effect on ne in amorphous films, in contrast to in crystalline phases. These results suggest that carrier electrons in amorphous SnO2 films originated from oxygen vacancies, similar to in In 2O3-based amorphous films.
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U2 - 10.7567/JJAP.53.05FX04
DO - 10.7567/JJAP.53.05FX04
M3 - Article
AN - SCOPUS:84903306557
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 SPEC. ISSUE 1
M1 - 05FX04
ER -