Carrier mobility and resistivity of n- and p-type Si_xGe _1-x (0.93 < x < 0.96) single crystals

Chemistry

• Impurity 100%
• Resistivity 50%
• Single Crystalline Solid 33%
• Electron Mobility 33%
• Hole Mobility 33%
• Scattering 33%
• Phase Composition 33%
• Alloy 33%
• Crystalline Material 33%
• Hall Effect Coefficient 16%
• Procedure 16%
• Ambient Reaction Temperature 16%

Material Science

• Impurity 100%
• Carrier Concentration 33%
• Single Crystal 33%
• Electron Mobility 33%
• Hole Mobility 33%
• Crystal 33%
• Si-Ge Alloys 16%
• Carrier Transport 16%
• Carrier Mobility 16%