@inproceedings{4994f8ea9112463cba4d21a2dc4005b0,
title = "Carrier redistribution analysis of gate-biased SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy",
abstract = "Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.",
author = "Norimichi Chinone and Yasuo Cho",
note = "Funding Information: Acknowledgement The authors would like to acknowledge M. Uno of Murata Manufacturing Co., Ltd., and T. Iwai of Research Institute of Electrical Communication., for support in the development of the high-sensitivity SNDM probe. This work was partially supported by Research Fellowships from the Japan Society for the Promotion of Science (JSPS) for Young Scientists (No. 268084) and a Grant-in-Aid for Scientific Research S (No. 23226008) from JSPS. Publisher Copyright: Copyright {\textcopyright} 2015 ASM International{\textregistered} All rights reserved.; 41st International Symposium for Testing and Failure Analysis, ISTFA 2015 ; Conference date: 01-11-2015 Through 05-11-2015",
year = "2015",
language = "English",
series = "Conference Proceedings from the International Symposium for Testing and Failure Analysis",
publisher = "ASM International",
pages = "329--332",
booktitle = "ISTFA 2015 - Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis",
address = "United States",
}