Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams

Akira Uedono, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Hideaki Matsuyama, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

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Physics