Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

N. Yamamoto; H. Itoh; V. Grillo; S. F. Chichibu; S. Keller; J. S. Speck; S. P. DenBaars; U. K. Mishra; S. Nakamura; G. Salviati

doi:10.1063/1.1598632

Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.

Original language	English
Pages (from-to)	4315-4319
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1598632
Publication status	Published - 2003 Oct 1

Access to Document

10.1063/1.1598632

Cite this

@article{b78078fa3b384f8ba0c3148aff6edc49,

title = "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope",

abstract = "A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.",

author = "N. Yamamoto and H. Itoh and V. Grillo and Chichibu, {S. F.} and S. Keller and Speck, {J. S.} and DenBaars, {S. P.} and Mishra, {U. K.} and S. Nakamura and G. Salviati",

year = "2003",

month = oct,

day = "1",

doi = "10.1063/1.1598632",

language = "English",

volume = "94",

pages = "4315--4319",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

AU - Yamamoto, N.

AU - Itoh, H.

AU - Grillo, V.

AU - Chichibu, S. F.

AU - Keller, S.

AU - Speck, J. S.

AU - DenBaars, S. P.

AU - Mishra, U. K.

AU - Nakamura, S.

AU - Salviati, G.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.

AB - A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.

UR - http://www.scopus.com/inward/record.url?scp=0142057583&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142057583&partnerID=8YFLogxK

U2 - 10.1063/1.1598632

DO - 10.1063/1.1598632

M3 - Article

AN - SCOPUS:0142057583

SN - 0021-8979

VL - 94

SP - 4315

EP - 4319

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

Abstract

Access to Document

Other files and links

Fingerprint

Cite this