Cathodoluminescence study on ZnO and GaN

T. Sekiguchi, N. Ohashi, H. Yamane

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9 Citations (Scopus)


Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.

Original languageEnglish
Pages (from-to)171-182
Number of pages12
JournalSolid State Phenomena
Publication statusPublished - 1998


  • Cathodoluminescence
  • Excitonic Luminescence
  • Flux Growth
  • GaN
  • Hydrogen Passivation
  • Visible Emission
  • ZnO


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