Cathodoluminescence study on ZnO and GaN

T. Sekiguchi; N. Ohashi; H. Yamane

doi:10.4028/www.scientific.net/ssp.63-64.171

Cathodoluminescence study on ZnO and GaN

T. Sekiguchi, N. Ohashi, H. Yamane

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.

Original language	English
Pages (from-to)	171-182
Number of pages	12
Journal	Solid State Phenomena
Volume	63-64
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.63-64.171
Publication status	Published - 1998

Keywords

Cathodoluminescence
Excitonic Luminescence
Flux Growth
GaN
Hydrogen Passivation
Visible Emission
ZnO

Access to Document

10.4028/www.scientific.net/ssp.63-64.171

Cite this

@article{e7430ed389b34fa187bdb541f6acb329,

title = "Cathodoluminescence study on ZnO and GaN",

abstract = "Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.",

keywords = "Cathodoluminescence, Excitonic Luminescence, Flux Growth, GaN, Hydrogen Passivation, Visible Emission, ZnO",

author = "T. Sekiguchi and N. Ohashi and H. Yamane",

year = "1998",

doi = "10.4028/www.scientific.net/ssp.63-64.171",

language = "English",

volume = "63-64",

pages = "171--182",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Scientific.net",

}

TY - JOUR

T1 - Cathodoluminescence study on ZnO and GaN

AU - Sekiguchi, T.

AU - Ohashi, N.

AU - Yamane, H.

PY - 1998

Y1 - 1998

N2 - Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.

AB - Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.

KW - Cathodoluminescence

KW - Excitonic Luminescence

KW - Flux Growth

KW - GaN

KW - Hydrogen Passivation

KW - Visible Emission

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=17344369927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17344369927&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/ssp.63-64.171

DO - 10.4028/www.scientific.net/ssp.63-64.171

M3 - Article

AN - SCOPUS:17344369927

SN - 1012-0394

VL - 63-64

SP - 171

EP - 182

JO - Solid State Phenomena

JF - Solid State Phenomena

ER -

Cathodoluminescence study on ZnO and GaN

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this