Cavity-through deep reactive ion etching of directly-bonded silicon wafers

Piljoong Kang; Shuji Tanaka; Masayoshi Esashi

doi:10.1109/SENSOR.2007.4300189

Cavity-through deep reactive ion etching of directly-bonded silicon wafers

Piljoong Kang, Shuji Tanaka, Masayoshi Esashi

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this paper mainly reports the generation of voids in wafers directly bonded with N₂ or O₂ plasma treatment due to H₂O release from hydroxy groups in low and high temperature annealing. The second half reports etch profiles and etch rates for cavity-through DRIE using different recipes. Cavity-through DRIE in conjunction with silicon direct bonding is practical and useful for multi-layer MEMS.

Original language	English
Title of host publication	TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages	549-553
Number of pages	5
DOIs	https://doi.org/10.1109/SENSOR.2007.4300189
Publication status	Published - 2007 Dec 1
Event	4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France Duration: 2007 Jun 10 → 2007 Jun 14

Publication series

Name	TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other	4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
Country/Territory	France
City	Lyon
Period	07/6/10 → 07/6/14

Keywords

Deep reactive ion etching (DRIE)
Direct bonding
Multilayer MEMS
Plasma treatment

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/SENSOR.2007.4300189

Cite this

Kang, P., Tanaka, S., & Esashi, M. (2007). Cavity-through deep reactive ion etching of directly-bonded silicon wafers. In TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 549-553). [4300189] (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2007.4300189

Cavity-through deep reactive ion etching of directly-bonded silicon wafers. / Kang, Piljoong; Tanaka, Shuji; Esashi, Masayoshi.
TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. p. 549-553 4300189 (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kang, P, Tanaka, S & Esashi, M 2007, Cavity-through deep reactive ion etching of directly-bonded silicon wafers. in TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems., 4300189, TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 549-553, 4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07, Lyon, France, 07/6/10. https://doi.org/10.1109/SENSOR.2007.4300189

Kang P, Tanaka S, Esashi M. Cavity-through deep reactive ion etching of directly-bonded silicon wafers. In TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. p. 549-553. 4300189. (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems). doi: 10.1109/SENSOR.2007.4300189

Kang, Piljoong ; Tanaka, Shuji ; Esashi, Masayoshi. / Cavity-through deep reactive ion etching of directly-bonded silicon wafers. TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. pp. 549-553 (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems).

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N2 - Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this paper mainly reports the generation of voids in wafers directly bonded with N2 or O2 plasma treatment due to H2O release from hydroxy groups in low and high temperature annealing. The second half reports etch profiles and etch rates for cavity-through DRIE using different recipes. Cavity-through DRIE in conjunction with silicon direct bonding is practical and useful for multi-layer MEMS.

AB - Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this paper mainly reports the generation of voids in wafers directly bonded with N2 or O2 plasma treatment due to H2O release from hydroxy groups in low and high temperature annealing. The second half reports etch profiles and etch rates for cavity-through DRIE using different recipes. Cavity-through DRIE in conjunction with silicon direct bonding is practical and useful for multi-layer MEMS.

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Cavity-through deep reactive ion etching of directly-bonded silicon wafers

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Keywords

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