TY - JOUR
T1 - Cellular structures in Czochralski-grown SiGe bulk crystal
AU - Yonenaga, I.
AU - Taishi, T.
AU - Ohno, Y.
AU - Tokumoto, Y.
PY - 2010/4/1
Y1 - 2010/4/1
N2 - A high purity SixGe1-x alloy (x0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular structures was evaluated by observing growth striations in the crystal by means of X-ray topography and optical microscopy. Temporary and fatal cellular structures were detected. Two possible factors were distinguished as being responsible for the origin of the cell formations: an enhancement of the effective growth velocity and a gradual reduction of Si composition. Both factors lead to the occurrence of constitutional supercooling beyond the critical relation between growth velocity and alloy composition.
AB - A high purity SixGe1-x alloy (x0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular structures was evaluated by observing growth striations in the crystal by means of X-ray topography and optical microscopy. Temporary and fatal cellular structures were detected. Two possible factors were distinguished as being responsible for the origin of the cell formations: an enhancement of the effective growth velocity and a gradual reduction of Si composition. Both factors lead to the occurrence of constitutional supercooling beyond the critical relation between growth velocity and alloy composition.
KW - A1. Constitutional supercooling
KW - A1. Segregation
KW - A1. Solid solution
KW - A2. Czochralski method
KW - A2. Single crystal growth
KW - B2. Semiconducting silicon compounds
UR - http://www.scopus.com/inward/record.url?scp=77949586537&partnerID=8YFLogxK
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U2 - 10.1016/j.jcrysgro.2009.10.025
DO - 10.1016/j.jcrysgro.2009.10.025
M3 - Article
AN - SCOPUS:77949586537
SN - 0022-0248
VL - 312
SP - 1065
EP - 1068
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 8
ER -