Cellular structures in Czochralski-grown SiGe bulk crystal

I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto

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17 Citations (Scopus)


A high purity SixGe1-x alloy (x0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular structures was evaluated by observing growth striations in the crystal by means of X-ray topography and optical microscopy. Temporary and fatal cellular structures were detected. Two possible factors were distinguished as being responsible for the origin of the cell formations: an enhancement of the effective growth velocity and a gradual reduction of Si composition. Both factors lead to the occurrence of constitutional supercooling beyond the critical relation between growth velocity and alloy composition.

Original languageEnglish
Pages (from-to)1065-1068
Number of pages4
JournalJournal of Crystal Growth
Issue number8
Publication statusPublished - 2010 Apr 1


  • A1. Constitutional supercooling
  • A1. Segregation
  • A1. Solid solution
  • A2. Czochralski method
  • A2. Single crystal growth
  • B2. Semiconducting silicon compounds


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