Three-dimensional (3D) LSIs using TSVs are indispensable to achieve high performance and low power LSIs with smaller form factor. A wafer-to-wafer (WtW) technology is suitable for stacking chips with high production yield such as DRAM since the overall yield after stacking rapidly decreases as the number of stacking layers increases. The chip-to-wafer (CtW) is suitable for stacking known good dies (KGDs). In addition, chips with different size which are fabricated using different process technologies can be stacked in the CtW technology. The inherent problem in the CtW technology, however, is low production throughput. To solve these problems, we have proposed a new 3D heterogeneous integration technology called a super-chip technology using self-assembly and electrostatic (SAE) bonding method.
|Title of host publication||Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3|
|Number of pages||8|
|Publication status||Published - 2013|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting - Toronto, ON, Canada|
Duration: 2013 May 12 → 2013 May 17
|Conference||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting|
|Period||13/5/12 → 13/5/17|