Changes in switching fields of CoCrPt- SiO₂ perpendicular recording media due to Ru intermediate layer under low and high gas pressures

It is well known that the deposition of an intermediate Ru layer under high Ar pressure during the fabrication of CoCrPt- SiO₂ perpendicular recording media is effective in improving the magnetic properties of the upper CoCrPt- SiO₂ layer. The change in the switching fields of the CoCrPt- SiO₂ recording layer resulting from the presence of the high-pressure Ru layer is investigated through experiments and computer simulation. The monotonous increase in the magnetic anisotropy Ku and the decrease in the intergranular exchange coupling of the CoCrPt grains due to the presence of the high-pressure Ru layer result in a slight increase in the nucleation field, a significant increase in the coercivity and the saturation field, and a decrease in the slope of the hysteresis loop.