Changes of magnetic anisotropy of CoPtCr perpendicular films due to ru intermediate layer under high gas pressure

Weixing Xia; Chuntao Xiao; Daisuke Shindo

doi:10.1109/TMAG.2010.2051449

Changes of magnetic anisotropy of CoPtCr perpendicular films due to ru intermediate layer under high gas pressure

Weixing Xia, Chuntao Xiao, Daisuke Shindo

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The uniaxial magnetic anisotropy K_u of CoPtCr-}SiO₂ granular perpendicular recording media increases when they are deposited on a Ru intermediate layer with high Ar gas pressure. In order to clarify the reason for the increase in K_u, we investigated the correlation between K_u of continuous CoPtCr film and the Ar gas pressure of the Ru layer. Six kinds of CoPtCr films with the compositions close to practical CoPtCr-SiO₂ recording media were deposited on the Ru layer with the Ar gas pressure varying from 0.6 to 8.0 Pa. The increase in K_u of continuous CoPtCr films was confirmed. Through the investigation on microstructure using X-ray diffraction, we found that the stacking faults or the fraction of face center cubic (FCC) phase of CoPtCr grains were independent on the gas pressure of Ru while the ratio of hexagonal close packed (HCP) crystal constant c/a monotonously decreased with increasing gas pressure. We conclude that the increase in K_u of CoPtCr continuous film is mostly related to the decease of c/a due to high gas pressure of Ru layer.

Original language	English
Article number	5482042
Pages (from-to)	3711-3714
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	46
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2010.2051449
Publication status	Published - 2010 Oct 1

Keywords

Magnetic anisotropy
magnetic films
magnetic recording

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2010.2051449

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title = "Changes of magnetic anisotropy of CoPtCr perpendicular films due to ru intermediate layer under high gas pressure",

abstract = "The uniaxial magnetic anisotropy Ku of CoPtCr-}SiO2 granular perpendicular recording media increases when they are deposited on a Ru intermediate layer with high Ar gas pressure. In order to clarify the reason for the increase in Ku, we investigated the correlation between Ku of continuous CoPtCr film and the Ar gas pressure of the Ru layer. Six kinds of CoPtCr films with the compositions close to practical CoPtCr-SiO2 recording media were deposited on the Ru layer with the Ar gas pressure varying from 0.6 to 8.0 Pa. The increase in Ku of continuous CoPtCr films was confirmed. Through the investigation on microstructure using X-ray diffraction, we found that the stacking faults or the fraction of face center cubic (FCC) phase of CoPtCr grains were independent on the gas pressure of Ru while the ratio of hexagonal close packed (HCP) crystal constant c/a monotonously decreased with increasing gas pressure. We conclude that the increase in Ku of CoPtCr continuous film is mostly related to the decease of c/a due to high gas pressure of Ru layer.",

keywords = "Magnetic anisotropy, magnetic films, magnetic recording",

author = "Weixing Xia and Chuntao Xiao and Daisuke Shindo",

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AU - Xia, Weixing

AU - Xiao, Chuntao

AU - Shindo, Daisuke

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The uniaxial magnetic anisotropy Ku of CoPtCr-}SiO2 granular perpendicular recording media increases when they are deposited on a Ru intermediate layer with high Ar gas pressure. In order to clarify the reason for the increase in Ku, we investigated the correlation between Ku of continuous CoPtCr film and the Ar gas pressure of the Ru layer. Six kinds of CoPtCr films with the compositions close to practical CoPtCr-SiO2 recording media were deposited on the Ru layer with the Ar gas pressure varying from 0.6 to 8.0 Pa. The increase in Ku of continuous CoPtCr films was confirmed. Through the investigation on microstructure using X-ray diffraction, we found that the stacking faults or the fraction of face center cubic (FCC) phase of CoPtCr grains were independent on the gas pressure of Ru while the ratio of hexagonal close packed (HCP) crystal constant c/a monotonously decreased with increasing gas pressure. We conclude that the increase in Ku of CoPtCr continuous film is mostly related to the decease of c/a due to high gas pressure of Ru layer.

AB - The uniaxial magnetic anisotropy Ku of CoPtCr-}SiO2 granular perpendicular recording media increases when they are deposited on a Ru intermediate layer with high Ar gas pressure. In order to clarify the reason for the increase in Ku, we investigated the correlation between Ku of continuous CoPtCr film and the Ar gas pressure of the Ru layer. Six kinds of CoPtCr films with the compositions close to practical CoPtCr-SiO2 recording media were deposited on the Ru layer with the Ar gas pressure varying from 0.6 to 8.0 Pa. The increase in Ku of continuous CoPtCr films was confirmed. Through the investigation on microstructure using X-ray diffraction, we found that the stacking faults or the fraction of face center cubic (FCC) phase of CoPtCr grains were independent on the gas pressure of Ru while the ratio of hexagonal close packed (HCP) crystal constant c/a monotonously decreased with increasing gas pressure. We conclude that the increase in Ku of CoPtCr continuous film is mostly related to the decease of c/a due to high gas pressure of Ru layer.

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KW - magnetic recording

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Changes of magnetic anisotropy of CoPtCr perpendicular films due to ru intermediate layer under high gas pressure

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