CHANNELING ANALYSIS OF MBE InAlAs/InGaAs INTERFACES.

D. V. Morgan; C. E.C. Wood; H. Ohno; L. F. Eastman

doi:10.1116/1.571136

CHANNELING ANALYSIS OF MBE InAlAs/InGaAs INTERFACES.

D. V. Morgan, C. E.C. Wood, H. Ohno, L. F. Eastman

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

A discussion is presented of how the Rutherford backscattering/channeling techniques may be used to study the interfaces between InAlAs/InGaAs epitaxial layers.

Original language	English
Pages (from-to)	596-598
Number of pages	3
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571136
Publication status	Published - 1981
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: 1981 Jan 27 → 1981 Jan 29

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1116/1.571136

Cite this

@article{342da4f2e1f9458ca88fc56665a850b4,

title = "CHANNELING ANALYSIS OF MBE InAlAs/InGaAs INTERFACES.",

abstract = "A discussion is presented of how the Rutherford backscattering/channeling techniques may be used to study the interfaces between InAlAs/InGaAs epitaxial layers.",

author = "Morgan, {D. V.} and Wood, {C. E.C.} and H. Ohno and Eastman, {L. F.}",

year = "1981",

doi = "10.1116/1.571136",

language = "English",

volume = "19",

pages = "596--598",

journal = "Journal of Vacuum Science and Technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "3",

note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th ; Conference date: 27-01-1981 Through 29-01-1981",

}

TY - JOUR

T1 - CHANNELING ANALYSIS OF MBE InAlAs/InGaAs INTERFACES.

AU - Morgan, D. V.

AU - Wood, C. E.C.

AU - Ohno, H.

AU - Eastman, L. F.

PY - 1981

Y1 - 1981

N2 - A discussion is presented of how the Rutherford backscattering/channeling techniques may be used to study the interfaces between InAlAs/InGaAs epitaxial layers.

AB - A discussion is presented of how the Rutherford backscattering/channeling techniques may be used to study the interfaces between InAlAs/InGaAs epitaxial layers.

UR - http://www.scopus.com/inward/record.url?scp=0019607958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019607958&partnerID=8YFLogxK

U2 - 10.1116/1.571136

DO - 10.1116/1.571136

M3 - Conference article

AN - SCOPUS:0019607958

SN - 0022-5355

VL - 19

SP - 596

EP - 598

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

CHANNELING ANALYSIS OF MBE InAlAs/InGaAs INTERFACES.

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this