Characteristics of oxide TFT using carbon-doped In2O3 thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H2O & O3

R. Kobayashi; T. Nabatame; K. Kurishima; T. Onaya; A. Ohi; N. Ikeda; T. Nagata; K. Tsukagoshi; A. Ogura

doi:10.1149/09203.0003ecst

Characteristics of oxide TFT using carbon-doped In₂O₃ thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H₂O & O₃

R. Kobayashi, T. Nabatame, K. Kurishima, T. Onaya, A. Ohi, N. Ikeda, T. Nagata, K. Tsukagoshi, A. Ogura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

We investigated characteristic of the In₂O₃ films deposited by various atomic layer deposition (ALD) conditions such as growth temperature and doses of ethylcyclopentadienyl indium (InEtCp) precursor and H₂O/O₃ oxidant gases. A self-limited ALD window was observed in the In₂O₃ film deposition when an InEtCp and H₂O/O₃ doses were supplied over 27.6 μmol and 0.09/2,94 mmol, respectively, regardless of the growth temperature. The ratio of In:0:C of the In₂O₃ films at 150, 170 and 200 °C were 1:1.16:0.04 (InO_1.16C_0.04), 1:1.16:0.03 (InO_1.16C_0.03) and 1:1.2:0 (InO_1.2), respectively. We found that the carbon-doped (InO_1.16C_0.04, InO_1.16C_0.0303) and carbon-free In₂O₃ (InO_1.2) films could be easily deposited by changing the growth temperature. All films had an amorphous structure. The electrical properties of InO_1.16C_0.04 TFT changed dramatically from metal-like conductor to semiconductor after post-metallization annealing at 150 °C in O3 while no InOi.2 TFT changed. This is thought to be due to the suppression of excess oxygen vacancies in InO_1.16C_0.04 channel by effect of doped carbon. The InO_1.16C_0.04-containing TFT exhibited superior characteristics of S.S (0.37 V/dec), I_on/I_off (1.0x10⁸), V_th. (3.5 V) and saturation field effect mobility (20.4 cm²/Vs). Therefore, carbon-doped In₂O₃ is a promising material as a channel of a flexible TFT where low temperature formation is essential.

Original language	English
Title of host publication	Atomic Layer Deposition Applications 15
Editors	Fred Roozeboom, Stefan De Gendt, Jolien Dendooven, Jeffrey W. Elam, Oscar van der Straten, Chanyuan Liu, Ganesh Sundaram, Andrea Illiberi
Publisher	Electrochemical Society Inc.
Pages	3-13
Number of pages	11
Edition	3
ISBN (Electronic)	9781607688778
ISBN (Print)	9781607688778
DOIs	https://doi.org/10.1149/09203.0003ecst
Publication status	Published - 2019
Externally published	Yes
Event	International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	3
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/09203.0003ecst

Cite this

Kobayashi, R., Nabatame, T., Kurishima, K., Onaya, T., Ohi, A., Ikeda, N., Nagata, T., Tsukagoshi, K., & Ogura, A. (2019). Characteristics of oxide TFT using carbon-doped In₂O₃ thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H₂O & O₃. In F. Roozeboom, S. De Gendt, J. Dendooven, J. W. Elam, O. van der Straten, C. Liu, G. Sundaram, & A. Illiberi (Eds.), Atomic Layer Deposition Applications 15 (3 ed., pp. 3-13). (ECS Transactions; Vol. 92, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/09203.0003ecst

Characteristics of oxide TFT using carbon-doped In₂O₃ thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H₂O & O₃. / Kobayashi, R.; Nabatame, T.; Kurishima, K. et al.
Atomic Layer Deposition Applications 15. ed. / Fred Roozeboom; Stefan De Gendt; Jolien Dendooven; Jeffrey W. Elam; Oscar van der Straten; Chanyuan Liu; Ganesh Sundaram; Andrea Illiberi. 3. ed. Electrochemical Society Inc., 2019. p. 3-13 (ECS Transactions; Vol. 92, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kobayashi, R, Nabatame, T, Kurishima, K, Onaya, T, Ohi, A, Ikeda, N, Nagata, T, Tsukagoshi, K & Ogura, A 2019, Characteristics of oxide TFT using carbon-doped In₂O₃ thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H₂O & O₃. in F Roozeboom, S De Gendt, J Dendooven, JW Elam, O van der Straten, C Liu, G Sundaram & A Illiberi (eds), Atomic Layer Deposition Applications 15. 3 edn, ECS Transactions, no. 3, vol. 92, Electrochemical Society Inc., pp. 3-13, International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09203.0003ecst

Kobayashi R, Nabatame T, Kurishima K, Onaya T, Ohi A, Ikeda N et al. Characteristics of oxide TFT using carbon-doped In₂O₃ thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H₂O & O₃. In Roozeboom F, De Gendt S, Dendooven J, Elam JW, van der Straten O, Liu C, Sundaram G, Illiberi A, editors, Atomic Layer Deposition Applications 15. 3 ed. Electrochemical Society Inc. 2019. p. 3-13. (ECS Transactions; 3). doi: 10.1149/09203.0003ecst

Kobayashi, R. ; Nabatame, T. ; Kurishima, K. et al. / Characteristics of oxide TFT using carbon-doped In₂O₃ thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H₂O & O₃. Atomic Layer Deposition Applications 15. editor / Fred Roozeboom ; Stefan De Gendt ; Jolien Dendooven ; Jeffrey W. Elam ; Oscar van der Straten ; Chanyuan Liu ; Ganesh Sundaram ; Andrea Illiberi. 3. ed. Electrochemical Society Inc., 2019. pp. 3-13 (ECS Transactions; 3).

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title = "Characteristics of oxide TFT using carbon-doped In2O3 thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H2O & O3",

abstract = "We investigated characteristic of the In2O3 films deposited by various atomic layer deposition (ALD) conditions such as growth temperature and doses of ethylcyclopentadienyl indium (InEtCp) precursor and H2O/O3 oxidant gases. A self-limited ALD window was observed in the In2O3 film deposition when an InEtCp and H2O/O3 doses were supplied over 27.6 μmol and 0.09/2,94 mmol, respectively, regardless of the growth temperature. The ratio of In:0:C of the In2O3 films at 150, 170 and 200 °C were 1:1.16:0.04 (InO1.16C0.04), 1:1.16:0.03 (InO1.16C0.03) and 1:1.2:0 (InO1.2), respectively. We found that the carbon-doped (InO1.16C0.04, InO1.16C0.0303) and carbon-free In2O3 (InO1.2) films could be easily deposited by changing the growth temperature. All films had an amorphous structure. The electrical properties of InO1.16C0.04 TFT changed dramatically from metal-like conductor to semiconductor after post-metallization annealing at 150 °C in O3 while no InOi.2 TFT changed. This is thought to be due to the suppression of excess oxygen vacancies in InO1.16C0.04 channel by effect of doped carbon. The InO1.16C0.04-containing TFT exhibited superior characteristics of S.S (0.37 V/dec), Ion/Ioff (1.0x108), Vth. (3.5 V) and saturation field effect mobility (20.4 cm2/Vs). Therefore, carbon-doped In2O3 is a promising material as a channel of a flexible TFT where low temperature formation is essential.",

author = "R. Kobayashi and T. Nabatame and K. Kurishima and T. Onaya and A. Ohi and N. Ikeda and T. Nagata and K. Tsukagoshi and A. Ogura",

note = "Funding Information: The authors thank all staff members of the MANA Foundry, WPI-MANA, NIMS for their support in fabricating the carbon-doped and carbon-free In2O3 films and TFTs. The authors also thank Takio Kizu for valuable comments and encouragement. This work was partially supported by JSPS KAKENHI Grant Number JP18K18868. Publisher Copyright: {\textcopyright} The Electrochemical Society.; International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",

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pages = "3--13",

editor = "Fred Roozeboom and {De Gendt}, Stefan and Jolien Dendooven and Elam, {Jeffrey W.} and {van der Straten}, Oscar and Chanyuan Liu and Ganesh Sundaram and Andrea Illiberi",

booktitle = "Atomic Layer Deposition Applications 15",

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T1 - Characteristics of oxide TFT using carbon-doped In2O3 thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H2O & O3

AU - Kobayashi, R.

AU - Nabatame, T.

AU - Kurishima, K.

AU - Onaya, T.

AU - Ohi, A.

AU - Ikeda, N.

AU - Nagata, T.

AU - Tsukagoshi, K.

AU - Ogura, A.

N1 - Funding Information: The authors thank all staff members of the MANA Foundry, WPI-MANA, NIMS for their support in fabricating the carbon-doped and carbon-free In2O3 films and TFTs. The authors also thank Takio Kizu for valuable comments and encouragement. This work was partially supported by JSPS KAKENHI Grant Number JP18K18868. Publisher Copyright: © The Electrochemical Society.

PY - 2019

Y1 - 2019

N2 - We investigated characteristic of the In2O3 films deposited by various atomic layer deposition (ALD) conditions such as growth temperature and doses of ethylcyclopentadienyl indium (InEtCp) precursor and H2O/O3 oxidant gases. A self-limited ALD window was observed in the In2O3 film deposition when an InEtCp and H2O/O3 doses were supplied over 27.6 μmol and 0.09/2,94 mmol, respectively, regardless of the growth temperature. The ratio of In:0:C of the In2O3 films at 150, 170 and 200 °C were 1:1.16:0.04 (InO1.16C0.04), 1:1.16:0.03 (InO1.16C0.03) and 1:1.2:0 (InO1.2), respectively. We found that the carbon-doped (InO1.16C0.04, InO1.16C0.0303) and carbon-free In2O3 (InO1.2) films could be easily deposited by changing the growth temperature. All films had an amorphous structure. The electrical properties of InO1.16C0.04 TFT changed dramatically from metal-like conductor to semiconductor after post-metallization annealing at 150 °C in O3 while no InOi.2 TFT changed. This is thought to be due to the suppression of excess oxygen vacancies in InO1.16C0.04 channel by effect of doped carbon. The InO1.16C0.04-containing TFT exhibited superior characteristics of S.S (0.37 V/dec), Ion/Ioff (1.0x108), Vth. (3.5 V) and saturation field effect mobility (20.4 cm2/Vs). Therefore, carbon-doped In2O3 is a promising material as a channel of a flexible TFT where low temperature formation is essential.

AB - We investigated characteristic of the In2O3 films deposited by various atomic layer deposition (ALD) conditions such as growth temperature and doses of ethylcyclopentadienyl indium (InEtCp) precursor and H2O/O3 oxidant gases. A self-limited ALD window was observed in the In2O3 film deposition when an InEtCp and H2O/O3 doses were supplied over 27.6 μmol and 0.09/2,94 mmol, respectively, regardless of the growth temperature. The ratio of In:0:C of the In2O3 films at 150, 170 and 200 °C were 1:1.16:0.04 (InO1.16C0.04), 1:1.16:0.03 (InO1.16C0.03) and 1:1.2:0 (InO1.2), respectively. We found that the carbon-doped (InO1.16C0.04, InO1.16C0.0303) and carbon-free In2O3 (InO1.2) films could be easily deposited by changing the growth temperature. All films had an amorphous structure. The electrical properties of InO1.16C0.04 TFT changed dramatically from metal-like conductor to semiconductor after post-metallization annealing at 150 °C in O3 while no InOi.2 TFT changed. This is thought to be due to the suppression of excess oxygen vacancies in InO1.16C0.04 channel by effect of doped carbon. The InO1.16C0.04-containing TFT exhibited superior characteristics of S.S (0.37 V/dec), Ion/Ioff (1.0x108), Vth. (3.5 V) and saturation field effect mobility (20.4 cm2/Vs). Therefore, carbon-doped In2O3 is a promising material as a channel of a flexible TFT where low temperature formation is essential.

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U2 - 10.1149/09203.0003ecst

DO - 10.1149/09203.0003ecst

M3 - Conference contribution

AN - SCOPUS:85077200631

SN - 9781607688778

T3 - ECS Transactions

SP - 3

EP - 13

BT - Atomic Layer Deposition Applications 15

A2 - Roozeboom, Fred

A2 - De Gendt, Stefan

A2 - Dendooven, Jolien

A2 - Elam, Jeffrey W.

A2 - van der Straten, Oscar

A2 - Liu, Chanyuan

A2 - Sundaram, Ganesh

A2 - Illiberi, Andrea

PB - Electrochemical Society Inc.

T2 - International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting

Y2 - 13 October 2019 through 17 October 2019

ER -