Characteristics of schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

D. C. Oh, J. J. Kim, H. Makino, T. Hanada, M. W. Cho, T. Yao, H. J. Ko

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We have investigated the characteristics of Au Schottky contacts to ZnO:N layers grown on (0001) GaN/Al2O3 substrates by plasma-assisted molecular-beam epitaxy. It is found that the Schottky characteristics are dependent on the growth temperature and polar direction of ZnO:N layers. The Schottky barrier height for the Au contact to a ZnO:N layer (300°C, Zn-polar) is estimated to be 0.66 and 0.69 eV by current-voltage measurements and capacitance-voltage measurements, respectively. It is found that the Schottky barrier height is proportional to the resistivity and incorporated N concentration of ZnO:N layers. Consequently, we believe that the low growth temperature and Zn-polar direction are favored for N incorporation in the growth of ZnO:N layers, which contributes to the increased resistivity in ZnO:N layers and results in good Schottky characteristics.

Original languageEnglish
Article number042110
Pages (from-to)042110-1-042110-3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2005


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