Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides

T. Tanabe; K. Suto; T. Saito; T. Kimura; Y. Oyama; J. Nishizawa

doi:10.1063/1.1513870

Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides

T. Tanabe, K. Suto, T. Saito, T. Kimura, Y. Oyama, J. Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides were studied using mode-locked Ti-sapphire pump source with 80 ps pulse width. The logarithmic Raman gain linearly increased with increasing the pump power density as long as the gain was less than about 10 dB. It became nearly proportional to the square root of the pump power density with further increasing the pump power. The pulse-gated Raman gain as high as 20 dB was attained.

Original language	English
Pages (from-to)	43-46
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1513870
Publication status	Published - 2003 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Tanabe, T.

AU - Suto, K.

AU - Saito, T.

AU - Kimura, T.

AU - Oyama, Y.

AU - Nishizawa, J.

PY - 2003/1/1

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N2 - The characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides were studied using mode-locked Ti-sapphire pump source with 80 ps pulse width. The logarithmic Raman gain linearly increased with increasing the pump power density as long as the gain was less than about 10 dB. It became nearly proportional to the square root of the pump power density with further increasing the pump power. The pulse-gated Raman gain as high as 20 dB was attained.

AB - The characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides were studied using mode-locked Ti-sapphire pump source with 80 ps pulse width. The logarithmic Raman gain linearly increased with increasing the pump power density as long as the gain was less than about 10 dB. It became nearly proportional to the square root of the pump power density with further increasing the pump power. The pulse-gated Raman gain as high as 20 dB was attained.

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JF - Journal of Applied Physics

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Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides

Abstract

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