The characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides were studied using mode-locked Ti-sapphire pump source with 80 ps pulse width. The logarithmic Raman gain linearly increased with increasing the pump power density as long as the gain was less than about 10 dB. It became nearly proportional to the square root of the pump power density with further increasing the pump power. The pulse-gated Raman gain as high as 20 dB was attained.
|Number of pages||4|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2003 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)