TY - GEN
T1 - Characterization and reliability of 3D LSI and SiP
AU - Lee, K. W.
AU - Murugesan, M.
AU - Bea, Jichel
AU - Fukushima, T.
AU - Tanaka, T.
AU - Koyanagi, M.
PY - 2013
Y1 - 2013
N2 - Reliability challenges in 3D LSI associated with mechanical constraints induced by Cu TSVs, μ-bumps and crystal defects, crystallinity in thinned Si wafer and metal contamination induced by Cu diffusion from TSVs and thinned backside surface are mainly discussed. Mechanical stresses induced by Cu TSVs and μ-bumps are strongly dependent on design rules and process parameters. DRAM retention characteristics were severely degraded by Si thinning, especially below 30 μm thickness. Minority carrier lifetime was seriously degraded by Cu diffusion from Cu TSVs as the blocking property of barrier layer in TSV is not sufficient. A dry polish (DP) treatment produced a superior extrinsic gettering (EG) layer to Cu diffusion at the backside. We suggest the nondestructive failure analysis using X-ray CT-scan to characterize TSVs connection and μ-bumps joining in 3D stacked LSIs.
AB - Reliability challenges in 3D LSI associated with mechanical constraints induced by Cu TSVs, μ-bumps and crystal defects, crystallinity in thinned Si wafer and metal contamination induced by Cu diffusion from TSVs and thinned backside surface are mainly discussed. Mechanical stresses induced by Cu TSVs and μ-bumps are strongly dependent on design rules and process parameters. DRAM retention characteristics were severely degraded by Si thinning, especially below 30 μm thickness. Minority carrier lifetime was seriously degraded by Cu diffusion from Cu TSVs as the blocking property of barrier layer in TSV is not sufficient. A dry polish (DP) treatment produced a superior extrinsic gettering (EG) layer to Cu diffusion at the backside. We suggest the nondestructive failure analysis using X-ray CT-scan to characterize TSVs connection and μ-bumps joining in 3D stacked LSIs.
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U2 - 10.1109/IEDM.2013.6724579
DO - 10.1109/IEDM.2013.6724579
M3 - Conference contribution
AN - SCOPUS:84894335002
SN - 9781479923076
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 7.2.1-7.2.4
BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013
T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013
Y2 - 9 December 2013 through 11 December 2013
ER -