Characterization for high-performance CMOS using in-wafer advanced Kelvin-contact device structure

Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.

Original languageEnglish
Article number4773500
Pages (from-to)126-133
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Issue number1
Publication statusPublished - 2009 Feb


  • Charge carrier mobility
  • Contact resistance
  • Electric variables measurement


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