TY - JOUR
T1 - Characterization of (111)-oriented epitaxial (K0.5Na0.5)NbO3 thick films deposited by hydrothermal method
AU - Shiraishi, Takahisa
AU - Ishikawa, Mutsuo
AU - Uchida, Hiroshi
AU - Kiguchi, Takanori
AU - Kurosawa, Minoru K.
AU - Funakubo, Hiroshi
AU - Konno, Toyohiko J.
N1 - Funding Information:
This research was partially supported by the Japan Science and Technology Agency (JST) via the Adaptable and Seamless Technology Transfer Program through Target-driven R&D (A-STEP). Part of this research was also supported by the Nohmura Foundation for Membrane Structure’s Technology.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/10
Y1 - 2017/10
N2 - (111)-oriented epitaxial (K0.5Na0.5)NbO3 films of 2 μm thickness were deposited at 240 °C on (111)cSrRuO3//(111)SrTiO3 substrates by a hydrothermal method. Scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy (STEM-EDS) mapping revealed that a K-rich interfacial region existed in the obtained films. Although the as-deposited films were annealed between 240 and 600 °C in O2 atmosphere, the crystal structure did not markedly change. On the other hand, the leakage current density drastically decreased from 10%2-100 to 10%6 A/cm2 at +80 kV/cm after annealing above 240 °C. In addition, the relative dielectric constant (er), remanent polarization (Pr), and piezoelectric constant (d33,PFM) increased with increasing annealing temperature from 300 to 600 °C, and their values were respectively 840, 5.7 μC/cm2, and 64 pm/V for the films annealed at 600 °C.
AB - (111)-oriented epitaxial (K0.5Na0.5)NbO3 films of 2 μm thickness were deposited at 240 °C on (111)cSrRuO3//(111)SrTiO3 substrates by a hydrothermal method. Scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy (STEM-EDS) mapping revealed that a K-rich interfacial region existed in the obtained films. Although the as-deposited films were annealed between 240 and 600 °C in O2 atmosphere, the crystal structure did not markedly change. On the other hand, the leakage current density drastically decreased from 10%2-100 to 10%6 A/cm2 at +80 kV/cm after annealing above 240 °C. In addition, the relative dielectric constant (er), remanent polarization (Pr), and piezoelectric constant (d33,PFM) increased with increasing annealing temperature from 300 to 600 °C, and their values were respectively 840, 5.7 μC/cm2, and 64 pm/V for the films annealed at 600 °C.
UR - http://www.scopus.com/inward/record.url?scp=85032873316&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85032873316&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.10PF04
DO - 10.7567/JJAP.56.10PF04
M3 - Article
AN - SCOPUS:85032873316
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 10
M1 - 10PF04
ER -