TY - JOUR
T1 - Characterization of Au thin films deposited on α-Sn(1 1 1)-(3×3)/InSb(1 1 1)A surfaces
AU - Kasukabe, Y.
AU - Zhao, X.
AU - Nishida, S.
AU - Fujino, Y.
N1 - Funding Information:
The authors thank Messrs. T. Nakamura, D. Kikawa and H. Nagatani for their assistance in this work. This work was partially supported by a Grant-in Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.
PY - 2007/4
Y1 - 2007/4
N2 - For the purpose to elucidate the character of the interface between Au metal and α-Sn films, Au metal thin films deposited on α-Sn(1 1 1) surfaces grown on InSb(1 1 1)A substrates are examined by using reflection high-energy electron diffraction (RHEED). The (1 1 1) surface of the α-Sn film with only the 3×3 reconstruction grown at 50 °C is used as a well-defined α-Sn(1 1 1) substrate for the growth of Au films. NiAs-type AuSn films with a high crystallinity are grown in the 1.1-nm-thick Au-deposited thin films on the α-Sn(1 1 1) held at room temperature (RT). The NiAs-type AuSn films have a 2×2 reconstructed surface structure. The orientation relationships between the AuSn and the α-Sn films are (0 0 1) AuSn//(1 1 1) α-Sn and [2 1 0]AuSn//[2 over(1, -) over(1, -)] α-Sn. On the other hand, at 60 °C, the AuSn with a high crystallinity grows in Au-deposited films of about 2.8 nm in thickness, although at RT the AuSn with a high crystallinity grows in Au-deposited films of about 1.1 nm in thickness as stated above. The difference of Au-deposited film thickness between them results from the difference of their interdiffusion lengths of Au and Sn atoms, which depend on the temperature. Taking the interdiffusion into account, the properties and the formation mechanism of interfaces between Au metal thin films as an electrode and the α-Sn/InSb semiconductor superlattice are discussed.
AB - For the purpose to elucidate the character of the interface between Au metal and α-Sn films, Au metal thin films deposited on α-Sn(1 1 1) surfaces grown on InSb(1 1 1)A substrates are examined by using reflection high-energy electron diffraction (RHEED). The (1 1 1) surface of the α-Sn film with only the 3×3 reconstruction grown at 50 °C is used as a well-defined α-Sn(1 1 1) substrate for the growth of Au films. NiAs-type AuSn films with a high crystallinity are grown in the 1.1-nm-thick Au-deposited thin films on the α-Sn(1 1 1) held at room temperature (RT). The NiAs-type AuSn films have a 2×2 reconstructed surface structure. The orientation relationships between the AuSn and the α-Sn films are (0 0 1) AuSn//(1 1 1) α-Sn and [2 1 0]AuSn//[2 over(1, -) over(1, -)] α-Sn. On the other hand, at 60 °C, the AuSn with a high crystallinity grows in Au-deposited films of about 2.8 nm in thickness, although at RT the AuSn with a high crystallinity grows in Au-deposited films of about 1.1 nm in thickness as stated above. The difference of Au-deposited film thickness between them results from the difference of their interdiffusion lengths of Au and Sn atoms, which depend on the temperature. Taking the interdiffusion into account, the properties and the formation mechanism of interfaces between Au metal thin films as an electrode and the α-Sn/InSb semiconductor superlattice are discussed.
KW - A1. Crystal structure
KW - A1. Reflection high-energy electron diffraction
KW - A1. Surface structure
KW - A3. Molecular beam epitaxy
KW - B1. Alloys
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U2 - 10.1016/j.jcrysgro.2006.11.218
DO - 10.1016/j.jcrysgro.2006.11.218
M3 - Article
AN - SCOPUS:33947316570
SN - 0022-0248
VL - 301-302
SP - 394
EP - 399
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - SPEC. ISS.
ER -