Characterization of extended defects of ZnTe/GaAs(100) hetero-interface by advanced transmission electron microscopy

Daisuke Shindo; Y. G. Park; B. J. Kim; J. F. Wang; M. Isshiki

doi:10.1088/0953-8984/14/48/382

Characterization of extended defects of ZnTe/GaAs(100) hetero-interface by advanced transmission electron microscopy

Daisuke Shindo, Y. G. Park, B. J. Kim, J. F. Wang, M. Isshiki

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The microstructure of a wide gap ZnTe epilayer on a (100) GaAs substrate has been investigated in detail by transmission electron microscopy (TEM). Through high-resolution electron microscopy (HREM), extended defects such as dislocations and stacking faults have been clearly observed in the ZnTe epilayer near the interface. Considerable lattice misorientation in the local area of the epilayer was clarified, being consistent with the results of x-ray diffraction. Furthermore, it was found that the lattice contraction along the [200] direction and the lattice expansion along the [022] direction exist in the GaAs substrate. The lattice contraction and expansion were quantitatively analysed by advanced TEM, i.e., image analysis on HREM images and nano-beam electron diffraction.

Original language	English
Pages (from-to)	13305-13311
Number of pages	7
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	48
DOIs	https://doi.org/10.1088/0953-8984/14/48/382
Publication status	Published - 2002 Dec 16

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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title = "Characterization of extended defects of ZnTe/GaAs(100) hetero-interface by advanced transmission electron microscopy",

abstract = "The microstructure of a wide gap ZnTe epilayer on a (100) GaAs substrate has been investigated in detail by transmission electron microscopy (TEM). Through high-resolution electron microscopy (HREM), extended defects such as dislocations and stacking faults have been clearly observed in the ZnTe epilayer near the interface. Considerable lattice misorientation in the local area of the epilayer was clarified, being consistent with the results of x-ray diffraction. Furthermore, it was found that the lattice contraction along the [200] direction and the lattice expansion along the [022] direction exist in the GaAs substrate. The lattice contraction and expansion were quantitatively analysed by advanced TEM, i.e., image analysis on HREM images and nano-beam electron diffraction.",

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T1 - Characterization of extended defects of ZnTe/GaAs(100) hetero-interface by advanced transmission electron microscopy

AU - Shindo, Daisuke

AU - Park, Y. G.

AU - Kim, B. J.

AU - Wang, J. F.

AU - Isshiki, M.

PY - 2002/12/16

Y1 - 2002/12/16

N2 - The microstructure of a wide gap ZnTe epilayer on a (100) GaAs substrate has been investigated in detail by transmission electron microscopy (TEM). Through high-resolution electron microscopy (HREM), extended defects such as dislocations and stacking faults have been clearly observed in the ZnTe epilayer near the interface. Considerable lattice misorientation in the local area of the epilayer was clarified, being consistent with the results of x-ray diffraction. Furthermore, it was found that the lattice contraction along the [200] direction and the lattice expansion along the [022] direction exist in the GaAs substrate. The lattice contraction and expansion were quantitatively analysed by advanced TEM, i.e., image analysis on HREM images and nano-beam electron diffraction.

AB - The microstructure of a wide gap ZnTe epilayer on a (100) GaAs substrate has been investigated in detail by transmission electron microscopy (TEM). Through high-resolution electron microscopy (HREM), extended defects such as dislocations and stacking faults have been clearly observed in the ZnTe epilayer near the interface. Considerable lattice misorientation in the local area of the epilayer was clarified, being consistent with the results of x-ray diffraction. Furthermore, it was found that the lattice contraction along the [200] direction and the lattice expansion along the [022] direction exist in the GaAs substrate. The lattice contraction and expansion were quantitatively analysed by advanced TEM, i.e., image analysis on HREM images and nano-beam electron diffraction.

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Characterization of extended defects of ZnTe/GaAs(100) hetero-interface by advanced transmission electron microscopy

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