Characterization of extrinsic oxide breakdown on thin dielectric oxide

Katsuya Shiga; Junko Komoru; Masafumi Katsumata; Akinobu Teramoto; Yoji Mashiko

Characterization of extrinsic oxide breakdown on thin dielectric oxide

Katsuya Shiga, Junko Komoru, Masafumi Katsumata, Akinobu Teramoto, Yoji Mashiko

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

Original language	English
Pages (from-to)	589-592
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E82-C
Issue number	4
Publication status	Published - 1999

Keywords

Activation energy
Extrinsic oxide breakdown
Oxide reliability
TDDB
Thin oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{7dbf41f5b69e4cb9a909a98bdbd774ff,

title = "Characterization of extrinsic oxide breakdown on thin dielectric oxide",

abstract = "A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.",

keywords = "Activation energy, Extrinsic oxide breakdown, Oxide reliability, TDDB, Thin oxide",

author = "Katsuya Shiga and Junko Komoru and Masafumi Katsumata and Akinobu Teramoto and Yoji Mashiko",

year = "1999",

language = "English",

volume = "E82-C",

pages = "589--592",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "4",

}

TY - JOUR

T1 - Characterization of extrinsic oxide breakdown on thin dielectric oxide

AU - Shiga, Katsuya

AU - Komoru, Junko

AU - Katsumata, Masafumi

AU - Teramoto, Akinobu

AU - Mashiko, Yoji

PY - 1999

Y1 - 1999

N2 - A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

AB - A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

KW - Activation energy

KW - Extrinsic oxide breakdown

KW - Oxide reliability

KW - TDDB

KW - Thin oxide

UR - http://www.scopus.com/inward/record.url?scp=0033311438&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033311438&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033311438

SN - 0916-8524

VL - E82-C

SP - 589

EP - 592

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 4

ER -

Characterization of extrinsic oxide breakdown on thin dielectric oxide

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this